Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 100 for “"molecular beam epitaxy (MBE)"”.
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Studies of nucleation, coherent tilt and surface phase transitions by molecular beam epitaxy
… crystals and alloys have been synthesized by molecular beam epitaxy (MBE). These crystals were employed to study the nucleation and strain relief processes during epitaxial growth, as well as phenomena of surface order-disorder transformations.
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An investigation into the use of group VI elements as dopants in III-V materials prepared by molecular beam epitaxy
… for n-type doping of GaAs and Ga1As grown by Molecular Beam Epitaxy (MBE). This source produces a pure oeam ot chalcogen dimers at low temperature (200-300°C) and is simply programmed by an applied emf. The response time of the cell is of the order of one second enabling complicated doping …
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High Performance Indium-Gallium-Arsenide / Indium-Aluminum-Arsenide Transistors Grown on Indium-Phosphide by Molecular Beam Epitaxy
Described in this thesis are the growth by molecular beam epitaxy (MBE) and characteristics of InGaAs/InAlAs transistors. Superior properties of the InGaAs/InAlAs system have attracted a great deal of interest in electronic and optical device applications for this material system, and spurred …
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Niobium-Tantalum Superlattices Grown by Molecular Beam Epitaxy: Structure, Transport, and Superconducting Properties
… 800 (ANGSTROM) were fabricated in this work by Molecular Beam Epitaxy (MBE) techniques. For the first time, electronic mean free paths and crystal domain sizes were much larger than the imposed wavelength in metallic superlattices. X-ray structure factor determinations of superlattices grown in …
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Studies of the growth of silicon and germanium overlayers: Surface, interface, and thin film formation
… and film morphology during the growth using molecular beam epitaxy (MBE) and vapor phase epitaxy (VPE) were thoroughly investigated. In these studies, detailed atomistic descriptions of crystal growth by MBE and VPE were obtained by utilizing high resolution core-level photoemission with …
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Properties of cobalt/copper and cobalt/palladium multilayers.
… Co/Pd multilayers were made by sputtering and molecular beam epitaxy (MBE). Various x-ray diffraction techniques have been used to study the structure of the multilayers. Magnetometry techniques were used to study the magnetic properties. Various optical techniques have been used to investigate …
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Scanning tunneling microscopy of silicon(100) 2 x 1
… surface in microelectronics and silicon molecular beam epitaxy (MBE), has been studied with the scanning tunneling microscope (STM) to attempt to clear up the controversy that surrounds previous studies of this surface. To this end, an ultra-high vacuum (UHV) STM/surface science system …
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Studies of ordering on surfaces and in superlattices by molecular beam epitaxy
Molecular beam epitaxy, MBE, was used in two different ways to study ordering on atomic scales. In one application the ordering of close packed planes into various stacking sequences was investigated by periodically alternating growth of Ir and Ru to produce single crystal superlattices. In …
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Two-dimensional and three-dimensional magnetism in ultrathin epitaxial rare-earth metal films
… Gd, Er, and Dy, grown with the technique of Molecular Beam Epitaxy (MBE). By employing advanced film fabrication techniques, each magnetic rare-earth element layer, between 0.1 and 10 atomic layers thick and magnetically separated from one another by thick spacers, is grown in layer-by-layer …
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High Quality ZnO Epitaxial Grown By Plasma Assisted Molecular Beam Epitaxy
… growth and characterization of high quality ZnO epitaxy layers.Zinc oxide (ZnO) epitaxy layers were grown on sapphire and epi-GaN substrates respectively, using plasma assisted molecular beam epitaxy (MBE) . Various growth conditions, such as growth temperature, II/VI ratio, and buffer layers, …
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Characterization of shallow impurities in high-purity gallium arsenide and indium phosphide using photothermal ionization spectroscopy: Nonequilibrium incorporation of amphoteric impurities
… grown by the growth techniques of liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD). With these quantitative analyses, the incorporation and amphoteric behavior of Group IV impurities have been correlated with …
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Quantum well devices fabricated using selective area growth and their application in optical fiber communication
… chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We will put more weight on SAG with MOCVD growth because certain properties of this technique are particularly attractive. We summarize growth conditions including pressure, temperature, material supply rate, and ratio …
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Studies and applications of molecular beam epitaxy
… of surface steps on nucleation and growth in molecular beam epitaxy (MBE). Studies of the critical temperature between two-dimensional and three-dimensional growth are completed by means of reflection high energy diffraction. These critical temperatures are observed to depend on the density of …
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An enhancement/depletion process for III-V compound semiconductor heterostructure field-effect transistors and optoelectronic integrated circuits
… of silicon. Recent advances in the fields of Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), as well as device and circuit fabrication have made large-scale integration (LSI) using III-V compound semiconductor devices possible. This thesis describes an …
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A theoretical study of surface kinetic processes in the Mbe growth of compound semiconductors
The surface kinetics processes in the molecular beam epitaxy (MBE) growth of GaAs (100) and the MBE doping kinetics are studied theoretically, using a stochastic model which is based on the master equation approach and random distribution approximation. The kinetic processes included in the model …
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Reactions of thin film bilayers of nickel on silicon-germanium alloys
… 1-x}$Ge$\sb{\rm x}$ films, deposited with the Molecular Beam Epitaxy (MBE) technique, are examined with the novel use of two in-situ analytical techniques: An in-situ 4-point probe resistance measurement, done during vacuum annealing of the bilayers, yields information about changes in the …
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Remote epitaxy of III-N membranes on amorphous boron nitride
… on three-dimensional structures. In this thesis, Molecular-Beam Epitaxy (MBE) grown monolayer aBN in two-dimensional structure is demonstrated. In-situ gallium nitride (GaN) remote epitaxy is finished on the transparent monolayer aBN. By doing the in-situ remote epitaxy, contaminations are …
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Light-induced States and Phase Transitions in Quantum Materials investigated by Photoemission Spectroscopy and Epitaxial Synthesis
… photoemission spectroscopy (trARPES) and molecular beam epitaxy (MBE). Through in-depth investigation into these phenomena, this thesis seeks to contribute to the broader understanding of light-matter interactions in quantum materials.
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ALN/ALSCN Acoustic Resonant Systems Based on Ultra-Thin Piezoelectric Films
… AlScN films directly grown on Si substrate using molecular beam epitaxy (MBE). A critical performance metric of an acoustic resonator, Q×kt2 Figure of merit (FoM), is discussed with robust structures that overcome thin-film fabrication challenges. We propose resonator/filter design in future …
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Low-temperature molecular beam epitaxy of gallium arsenide Antisite incorporation and Rheed oscillations: A theoretical study
… (RHEED) intensity in the low temperature (LT) molecular beam epitaxy (MBE) of (100) gallium arsenide (GaAs). A comprehensive rate equation model is proposed based on the presence and dynamics of a physisorbed arsenic (PA) riding the growth surface which dictates the incorporation and …
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