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Showing 1 to 20 of 250 for “"molecular beam epitaxy"”.
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Silicon molecular beam epitaxy
… doping of Si-MBE layers prepared in a commercial molecular beam growth system and in the evaluation of their electrical and crystallographic properties. A number of technological problems associated with flux monitoring, the flaking of excess Si deposits and the use of closed-cycle He cryopumps …
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Molecular Beam Epitaxy: A Thermomechanical Treatment
We perform a linear stability analysis, and consider the dependence of the growth rate of instability on the wave number. This dispersion relation is a function of many parameters that describe the elasticity and chemistry of the film and substrate. The analysis permits us to recover the classical …
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Studies and Applications of Molecular Beam Epitaxy
Submitted by Jenny Wong-Welch (wongwel2@illinois.edu) on 2011-11-10T23:23:49Z No. of bitstreams: 1 1992_matheny.pdf: 3841756 bytes, checksum: 8d6b8afce27924420d869f3236163bec (MD5)
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Studies and applications of molecular beam epitaxy
… of surface steps on nucleation and growth in molecular beam epitaxy (MBE). Studies of the critical temperature between two-dimensional and three-dimensional growth are completed by means of reflection high energy diffraction. These critical temperatures are observed to depend on the density of …
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Modeling of gallium nitride molecular beam epitaxy growth
… sound surface processes to investigate the molecular beam epitaxy growth of GaN using ammonia and ECR plasma source. A surface riding layer of Ga and ammonia or N plasma species are included in the model. The surface riding species are allowed to undergo several physical and chemical …
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Molecular Beam Epitaxy Synthesis and Characterization of Indium Selenide Films
… substrate choice, and Se/In flux ratio during molecular beam epitaxy synthesis on the phase composition, surface morphology and stoichiometry of indium selenide films was investigated. Higher substrate temperature combined with higher Se/In ratio promoted formation of β-In2Se3 over γ and/or …
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III-nitride Semiconductors Grown By Plasma Assisted Molecular Beam Epitaxy
… successfully by many growth methods. Among them, molecular beam epitaxy (MBE) is a promising epitaxial growth method owing to precise control of growth parameters, which significantly affect the film properties, composition, and thickness. However, the understanding of growth mechanism of …
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Growth of Indium Nitride Quantum Dots by Molecular Beam Epitaxy
… by which InN quantum dots (QDs) form through molecular beam epitaxy (MBE) growth in Nitrogen-Rich and Metal-Rich growth environments. </p> <p>Structural characterization was performed using Atomic Force Microscopy. Statistical analysis was performed on both growth environments, Metal-Rich and …
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Self-Assembled Barium Titanate Nanoscale Films by Molecular Beam Epitaxy
… the growth of barium titanate (BaTiO3) by molecular beam epitaxy has relied on a growth technique called shuttered RHEED. Shuttered RHEED controls the stoichiometry of barium titanate through the precise deposition of alternating layers of BaO and TiO2. While this approach has achieved 1% …
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Superconductivity in oxygen doped iron telluride by molecular beam epitaxy
… the growth recipe of thin film iron telluride by Molecular Beam Epitaxy (MBE). We found the growth to be self-regulated, similar to that of GaAs. The initial layers of growth seem to experience a spontaneous crystallization, as the film quickly go from the initial polycrystalline phase to highly …
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An investigation of heterojunction bipolar transistors by molecular beam epitaxy
Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar transistors (HBTs). The superior high current handling capacity and high operation frequency of heterojunction bipolar transistors have attracted a great deal of interest in millimeter-wave and …
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High Quality ZnO Epitaxial Grown By Plasma Assisted Molecular Beam Epitaxy
… growth and characterization of high quality ZnO epitaxy layers.Zinc oxide (ZnO) epitaxy layers were grown on sapphire and epi-GaN substrates respectively, using plasma assisted molecular beam epitaxy (MBE) . Various growth conditions, such as growth temperature, II/VI ratio, and buffer layers, …
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Studies of InAs and GaAs layers prepared by molecular beam epitaxy
… thin films of GaAs and InAs by the technique of molecular beam epitaxy (MBE). One micron thick unintentionally doped films of InAs were deposited onto GaAs substrates at the relatively low growth temperature of 370°C and GaAs films were grown over the range 400 - 650°C. A detailed study of the …
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Synthesis and Properties of GaAs1-xBix Prepared by Molecular Beam Epitaxy
… advance the understanding of its synthesis using molecular beam epitaxy (MBE) and, as a result, improve its key as-grown properties that are of great importance to device applications, such as increasing Bi concentration in the alloy and enhancing its optical emission efficiency.</p><p>In chapter …
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Growth and characterization of epitaxial graphene films by Molecular Beam Epitaxy
… I attempt to grow epitaxial graphene by Molecular Beam Epitaxy (MBE) by depositing Carbon (C) from a high purity solid graphite source where the growth rate of graphene, the rate of deposition and the substrate temperature can be controlled independently. In this research work, I studied …
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Characterisation of ScN and ScGaN alloys grown by Molecular Beam Epitaxy
… of ScN and dilute ScGaN films grown by molecular beam epitaxy (MBE), with special emphasis on the microstructure, surface topography and local bonding environment of Sc in these materials. The results are based on a broad range of characterisation techniques including transmission …
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Studies of ordering on surfaces and in superlattices by molecular beam epitaxy
Molecular beam epitaxy, MBE, was used in two different ways to study the ordering of materials on an atomic scale. In one application the ordering of close packed planes into hcp or fcc structures, or polytype stacking sequences was investigated by periodically alternating growth of Ir and Ru to …
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Studies of ordering on surfaces and in superlattices by molecular beam epitaxy
Molecular beam epitaxy, MBE, was used in two different ways to study ordering on atomic scales. In one application the ordering of close packed planes into various stacking sequences was investigated by periodically alternating growth of Ir and Ru to produce single crystal superlattices. In …
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Growth of lattice-mismatched iii-phosphide optoelectronic devices by molecular beam epitaxy
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2025-12-01
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