Global ETD Search

Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors

Zhu, YanVirginia Tech2014

Reducing supply voltage is a promising way to address the power dissipation in nano-electronic circuits. However, the fundamental lower limit of subthreshold slope (SS) within metal-oxide-semiconductor field-effect transistors (MOSFETs) is a major obstacle to further scaling the operation voltage …

vt Repository record for Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors (opens in a new tab)