Global ETD Search
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Showing 1 to 5 of 5 for “"metamorphic growth"”.
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Molecular beam epitaxy of InAsP graded buffers: From mid-infrared quantum wells to InAs virtual substrates with low threading dislocation density
… on industrially favorable III-V substrates. Metamorphic growth can be used to overcome the lattice mismatch between low bandgap III-V materials and conventional III-V substrates like GaAs and InP. While metamorphic growth offers the opportunity to engineer III-V materials with novel …
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Theory and optimisation of metamorphic photonic devices
Metamorphic growth of semiconductor materials – in which a “virtual” substrate with a desired lattice constant is obtained by growing a lattice-mismatched metamorphic buffer layer (MBL) on a conventional substrate such as InP or GaAs – is beginning to attract increasing interest due to its …
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Mid-infrared antimonide based type II quantum dot lasers for use in gas sensing
… laser diodes. The molecular beam epitaxy (MBE) growth of the QDs on GaAs and InP substrates can largely cut down the costs for future devices and massively broaden its application possibilities using the more mature material platforms. Different metamorphic growth techniques including …
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MOVPE metamorphic lasers and nanostructures engineering at telecom wavelengths
… associated with InP-based technologies. InGaAs metamorphic buffer heterostructures constitutes an alternative to the conventional routes relying on quantum dots or dilute nitride approaches, all with their own technical challenges and drawbacks. Metamorphic growth techniques provide …
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Growth and characterization of gallium arsenide phosphide and gallium phosphide on silicon for III-V/Si multi-junction solar cells
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-08-01