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Showing 1 to 20 of 30 for “"metalorganic chemical vapor deposition (MOCVD)"”.
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Novel process and apparatus design for metalorganic chemical vapor deposition (MOCVD) of superconducting thin films
… a number of YBa2Cu3Ox-7 (YBCO) superconductor deposition systems developed by various laboratories are subjected to a critical review and analysis. Deficiencies in the design of these deposition processes, and deficiencies in the design of the mechanisms and tools used to carry out these …
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Integrable and Integrated Optoelectronic Devices Grown by Metalorganic Chemical Vapor Deposition
… and integrated optoelectronic devices grown by metalorganic chemical vapor deposition (MOCVD) crystal growth. The emphasis is on device design and fabrication using crystal growth techniques to minimize post-growth processing and add design flexibility.
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Fabrication of novel semiconductor lasers grown by metalorganic chemical vapor deposition
… fabrication processes and the advantages of metalorganic chemical vapor deposition (MOCVD) growth on nonplanar substrates which increase the maximum output power of semiconductor lasers when limited by catastrophic optical degradation (COD). Additionally, the characteristics and properties of …
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Wavelength Modified and Strained-Layer Quantum-Well Heterostructure and Superlattice Lasers (aluminum-Gallium - Arsenide)
… (QWH) and superlattice (SL) lasers grown by metalorganic chemical vapor deposition (MOCVD) are investigated. Size quantization, high pressure, and thermal annealing are the methods used to alter the output energy of these lasers. Stimulated emission in strained-layer QWH's and SL's is …
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Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices
… of crystal growth technology, specifically metalorganic chemical vapor deposition (MOCVD) as it relates to this work, has made it practical to manufacture an entirely new class of heterojunction devices. Physical properties of semiconductor heterojunction devices such as resonant tunneling …
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The growth of aluminum gallium arsenide/gallium arsenide graded barrier quantum well heterostructure lasers on planar and nonplanar substrates by metalorganic chemical vapor deposition
Metalorganic chemical vapor deposition (MOCVD) is a crystal growth technique which has demonstrated the capacity to deposit epitaxial layers possessing the high levels of crystalline quality and material purity required for the fabrication of state of the art devices in a variety of material …
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Metalorganic chemical vapor deposition, ion beam mixing, and selective epitaxy of III-V semiconductors
Metalorganic Chemical Vapor Deposition (MOCVD) is a versatile growth technique commonly used to grow III-V compound semiconductor materials. A review of many seminal studies investigating the growth mechanisms of GaAs epitaxial growth is presented. Carbon is an intrinsic impurity in GaAs and AlGaAs …
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Distributed Feedback Ridge Waveguide and Step-Graded Separate Confinement Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition
… epitaxial growth techniques such as metalorganic chemical vapor deposition (MOCVD), compound semiconductor device research has flourished. Advancements in device physics as well as the development of coherent optical sources and high speed electronic devices have been achieved in both …
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Metalorganic Chemical Vapor Deposition and Its Application to the Growth of the Heterostructure Hot Electron Diode
Metalorganic chemical vapor deposition (MOCVD) is an epitaxial crystal growth technique capable of producing high-quality compound semiconductors in thick or thin layers with abrupt junctions, excellent area uniformity, and precisely controlled thickness, doping and composition. In this work the …
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Characterization of shallow impurities in high-purity gallium arsenide and indium phosphide using photothermal ionization spectroscopy: Nonequilibrium incorporation of amphoteric impurities
… growth techniques of liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD). With these quantitative analyses, the incorporation and amphoteric behavior of Group IV impurities have been correlated with the growth …
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Carbon doping of compound semiconductor epitaxial layers grown by metalorganic chemical vapor deposition using carbon tetrachloride
… $\rm Al\sb{x}Ga\sb{1-x}As$ grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl$\sb4$ doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth …
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Quantum well devices fabricated using selective area growth and their application in optical fiber communication
… achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We will put more weight on SAG with MOCVD growth because certain properties of this technique are particularly attractive. We summarize growth conditions including …
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The growth and characterization of III-V compound semiconductor materials by metalorganic chemical vapor deposition and laser photochemical vapor deposition
Despite the vast use of metalorganic chemical vapor deposition (MOCVD) for the growth of optical and electronic devices, it is a process for which the details of the reaction mechanisms are not well understood. Efforts aimed at gaining insight into growth-related matters will be described here and …
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Low Carbon n-GaN Drift Layers for Vertical Power Electronic Devices
… the growth process, incorporated into GaN during metalorganic chemical vapor deposition (MOCVD) growth. The level of carbon incorporation depends on several factors, including growth rate, ammonia flow, temperature, pressure, and trimethylgallium (TMGa) flow. Through guided empirical modeling, it …
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Characterization of III-V compound semiconductor heterostructures grown by metalorganic chemical vapor deposition
… no defects, and abrupt interfaces. For this metalorganic chemical vapor deposition (MOCVD) is one of the most important growth methods. In this study, transmission electron microscopy (TEM) was used for the characterization of epilayer structures grown by the MOCVD technique. High resolution …
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MOCVD growth of In GaP-based heterostructures for light emitting devices
… growth of indium gallium phosphide (InGaP) via metalorganic chemical vapor deposition (MOCVD). In particular, we realize improvements in the epitaxial integration of high-quality InGaP device materials on non-standard platforms, such as GeSi graded buffers orSi substrates, and InGaP or indium …
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Low temperature magneto-photoluminescence characterization of high purity gallium arsenide and indium phosphide
… GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) 1s investigated using photoluminescence. Si acceptors ~n MBE GaAs are also found to be passivated by hydrogenation. The instabilities in the passivation of acceptor impurities are observed for the …
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Photo-hall studies of compound semiconductors
… carrier concentration have been measured. In one metalorganic chemical vapor deposition (MOCVD) grown GaAs sample, the low temperature mobility was decreased by two orders of magnitude after illumination. These particular results have their origin in the occurrence of a accumulation of impurities …
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Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques
… we report a novel method, inverse metal-assisted chemical etching (i-MacEtch), in lieu of conventional RIE etching, for 3D fin channel formation. InP junctionless FinFETs with record high-aspect-ratio (~ 50:1) fins are demonstrated by this method for the first time. The i-MacEtch process flow …
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