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Showing 1 to 20 of 58 for “"metalorganic chemical vapor deposition"”.
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Metalorganic chemical vapor deposition of metal oxides
… disks, and Pt/Ti/SiO₂/Si substrates by hot wall metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)ruthenium [Ru(C₅H₅)₂], zirconium tetramethylheptanedione [Zr(thd)₄], triphenylbismuth [Bi(C₆H₅)₃], and titanium ethoxide [Ti(C₂H₅O)₄] were used as precursors. MOCVD RuO₂ film …
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Laser-assisted metalorganic chemical vapor deposition of zinc selenide
Laser-assisted metalorganic chemical vapor deposition (LMOCVD) has been used to grow epitaxial zinc selenide at temperatures as low as 200$\sp\circ$C. The metalorganic sources, dimethylzinc (DMZ) and diethylselenide (DESe), were photodissociated with radiation from a 193 nm ArF excimer laser …
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Semiconductor Laser Arrays Grown by Metalorganic Chemical Vapor Deposition
The metalorganic chemical vapor deposition system (MOCVD) allows for the growth of ultrathin epitaxial layers of III-V semiconductor compounds. This vapor deposition process is well suited for the growth of high performance semiconductor laser structures. Experimental data have been collected on a …
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Epitaxy of Self -Assembled Nanostructures by Metalorganic Chemical Vapor Deposition
The future of self-assembled nanostructures lies in the selective placement of individual nanostructures for applications such as integrated optoelectronics, quantum computing and quantum encryption. By utilizing InGaAs thin films, a method of selective area epitaxy has been developed. Not only is …
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Real-Space Transfer Transistors Grown by Metalorganic Chemical Vapor Deposition
… transfer transistors which are grown by metalorganic chemical vapor deposition. In the negative-resistance field-effect transistor and the charge-injection transistor, the standard GaAs electron channel is replaced with a strained-layer ln$\sb{x}$Ga$\sb{1-x}$As electron channel. With …
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High-power semiconductor laser arrays by metalorganic chemical vapor deposition
Semiconductor injection lasers have the capability of producing very high output powers if a large array of diodes can be fabricated. The development of useful high power semiconductor lasers depends on fabrication processes which overcome the problems associated with high power laser operation. …
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Metalorganic chemical vapor deposition of aluminum nitride and gallium nitride
… Institute of Technology, Dept. of Chemical Engineering, 1992.
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Integrable and Integrated Optoelectronic Devices Grown by Metalorganic Chemical Vapor Deposition
… and integrated optoelectronic devices grown by metalorganic chemical vapor deposition (MOCVD) crystal growth. The emphasis is on device design and fabrication using crystal growth techniques to minimize post-growth processing and add design flexibility.
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Fabrication of novel semiconductor lasers grown by metalorganic chemical vapor deposition
… fabrication processes and the advantages of metalorganic chemical vapor deposition (MOCVD) growth on nonplanar substrates which increase the maximum output power of semiconductor lasers when limited by catastrophic optical degradation (COD). Additionally, the characteristics and properties of …
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Direct liquid injection metalorganic chemical vapor deposition of ferroelectric PZT films
A direct liquid injection (DLI) metalorganic chemical vapor deposition (MOCVD) technique was devised to deposit ferroelectric lead zirconate titanate (PZT) films for the first time. By utilizing a cheap DLI precursor delivery system, the problems encountered in the conventional precursor delivery …
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Metalorganic Chemical Vapor Deposition of High-Performance GaAs-Based Quantum-Dot Lasers
Im Rahmen dieser Arbeit wurde eine Verbesserung der metallorganischen Gasphasenepitaxie (MOCVD) neuartiger GaAs-basierter Halbleiter-Laserstrukturen mit selbstorganisierten InGaAs/GaAs Stranski-Krastanow-Quantenpunkten (QPen) als aktivem Medium hinsichtlich der Lasereigenschaften erzielt. Die …
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Optical property studies and metalorganic chemical vapor deposition of ferroelectric thin films
… used in this part of study were prepared by metalorganic decomposition (MOD) process. The envelope method, with consideration of light intensity loss from the back surface of the substrate, was demonstrated to be a simple and convenient tool for obtaining the optical properties of the PZT …
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The chemistry of metalorganic chemical vapor deposition from a copper alkoxide precursor
The chemistry of chemical vapor deposition from copper (II) dimethylaminoethoxide onto single crystal strontium titanate has been studied by in situ infrared analysis of the vapor phase in the reactor, and by simultaneous mass spectrometer analysis of the reactor outlet gas. Species condensed from …
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Characterization of III-V compound semiconductor heterostructures grown by metalorganic chemical vapor deposition
… no defects, and abrupt interfaces. For this metalorganic chemical vapor deposition (MOCVD) is one of the most important growth methods. In this study, transmission electron microscopy (TEM) was used for the characterization of epilayer structures grown by the MOCVD technique. High resolution …
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Low-Pressure Metalorganic Chemical Vapor Deposition of High-Gain InGaP/GaAs Heterojunction Bipolar Transistors
The impact of the emitter and cap growth conditions on the gain of heterojunction bipolar transistors (HBTs) was studied by annealing to simulate the prolonged growth of HBTs with a heavily carbon-doped base. The results indicate that postgrowth annealing at a temperature close to the growth …
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Metalorganic chemical vapor deposition, ion beam mixing, and selective epitaxy of III-V semiconductors
Metalorganic Chemical Vapor Deposition (MOCVD) is a versatile growth technique commonly used to grow III-V compound semiconductor materials. A review of many seminal studies investigating the growth mechanisms of GaAs epitaxial growth is presented. Carbon is an intrinsic impurity in GaAs and AlGaAs …
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Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition
Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of …
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Development of high-performance front-illumination III-N avalanche photodiodes by metalorganic chemical vapor deposition
… current. Furthermore, their high structural, chemical, and thermal stability make GaN APDs attractive for operation in harsh environments. Their high breakdown electric field and high operating frequency properties can play an important role in efficient electrical conversion and transmission …
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Metalorganic Chemical Vapor Deposition of Gallium-Arsenide/aluminum-Gallium - Arsenide Thin-Layer Superlattices Andlaser Structures
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.
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