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Showing 1 to 20 of 86 for “"metalorganic"”.
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Metalorganic chemical vapor deposition of metal oxides
… disks, and Pt/Ti/SiO₂/Si substrates by hot wall metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)ruthenium [Ru(C₅H₅)₂], zirconium tetramethylheptanedione [Zr(thd)₄], triphenylbismuth [Bi(C₆H₅)₃], and titanium ethoxide [Ti(C₂H₅O)₄] were used as precursors. MOCVD RuO₂ film …
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Laser-assisted metalorganic chemical vapor deposition of zinc selenide
Laser-assisted metalorganic chemical vapor deposition (LMOCVD) has been used to grow epitaxial zinc selenide at temperatures as low as 200$\sp\circ$C. The metalorganic sources, dimethylzinc (DMZ) and diethylselenide (DESe), were photodissociated with radiation from a 193 nm ArF excimer laser …
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Engineering of Alkali Metalorganic Precursors: Synthesis to Mechanistic Aspects
Alkali metal (Li, Na, and K) containing materials have become the holy grail for sustainable energy materials and green functional devices. As a means to transition towards more sustainable technologies, there has been an increase in developing new materials that do not contain harmful, toxic, or …
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Semiconductor Laser Arrays Grown by Metalorganic Chemical Vapor Deposition
The metalorganic chemical vapor deposition system (MOCVD) allows for the growth of ultrathin epitaxial layers of III-V semiconductor compounds. This vapor deposition process is well suited for the growth of high performance semiconductor laser structures. Experimental data have been collected on a …
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Multiscale models of the metalorganic vapor phase epitaxy process
… vapor deposition processes, specifically metalorganic vapor phase epitaxy (MOVPE). The difficulty in creating an overall modeling strategy for the MOVPE process is that important processes occur on a wide range of length and time scales. Gas phase heat and mass transfer affect the flux of …
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Epitaxy of Self -Assembled Nanostructures by Metalorganic Chemical Vapor Deposition
The future of self-assembled nanostructures lies in the selective placement of individual nanostructures for applications such as integrated optoelectronics, quantum computing and quantum encryption. By utilizing InGaAs thin films, a method of selective area epitaxy has been developed. Not only is …
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Real-Space Transfer Transistors Grown by Metalorganic Chemical Vapor Deposition
… transfer transistors which are grown by metalorganic chemical vapor deposition. In the negative-resistance field-effect transistor and the charge-injection transistor, the standard GaAs electron channel is replaced with a strained-layer ln$\sb{x}$Ga$\sb{1-x}$As electron channel. With …
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High-power semiconductor laser arrays by metalorganic chemical vapor deposition
Semiconductor injection lasers have the capability of producing very high output powers if a large array of diodes can be fabricated. The development of useful high power semiconductor lasers depends on fabrication processes which overcome the problems associated with high power laser operation. …
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Metalorganic chemical vapor deposition of aluminum nitride and gallium nitride
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1992.
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Integrable and Integrated Optoelectronic Devices Grown by Metalorganic Chemical Vapor Deposition
… and integrated optoelectronic devices grown by metalorganic chemical vapor deposition (MOCVD) crystal growth. The emphasis is on device design and fabrication using crystal growth techniques to minimize post-growth processing and add design flexibility.
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Fabrication of novel semiconductor lasers grown by metalorganic chemical vapor deposition
… fabrication processes and the advantages of metalorganic chemical vapor deposition (MOCVD) growth on nonplanar substrates which increase the maximum output power of semiconductor lasers when limited by catastrophic optical degradation (COD). Additionally, the characteristics and properties of …
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Direct liquid injection metalorganic chemical vapor deposition of ferroelectric PZT films
A direct liquid injection (DLI) metalorganic chemical vapor deposition (MOCVD) technique was devised to deposit ferroelectric lead zirconate titanate (PZT) films for the first time. By utilizing a cheap DLI precursor delivery system, the problems encountered in the conventional precursor delivery …
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Metalorganic Chemical Vapor Deposition of High-Performance GaAs-Based Quantum-Dot Lasers
Im Rahmen dieser Arbeit wurde eine Verbesserung der metallorganischen Gasphasenepitaxie (MOCVD) neuartiger GaAs-basierter Halbleiter-Laserstrukturen mit selbstorganisierten InGaAs/GaAs Stranski-Krastanow-Quantenpunkten (QPen) als aktivem Medium hinsichtlich der Lasereigenschaften erzielt. Die …
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Optical property studies and metalorganic chemical vapor deposition of ferroelectric thin films
… used in this part of study were prepared by metalorganic decomposition (MOD) process. The envelope method, with consideration of light intensity loss from the back surface of the substrate, was demonstrated to be a simple and convenient tool for obtaining the optical properties of the PZT …
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Preparation and characterization of lead lanthanum titanate thin films by metalorganic decomposition
… atomic percentage of lanthanum were prepared by metalorganic decomposition (MOD) process. Solutions were prepared from lead acetate, lanthanum acetate and titanium iso-propoxide and thin films were then spin-coated from these solutions on PtlTilSi0₂/Si and sapphire substrates. The films were …
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The chemistry of metalorganic chemical vapor deposition from a copper alkoxide precursor
The chemistry of chemical vapor deposition from copper (II) dimethylaminoethoxide onto single crystal strontium titanate has been studied by in situ infrared analysis of the vapor phase in the reactor, and by simultaneous mass spectrometer analysis of the reactor outlet gas. Species condensed from …
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Synthesis of hybrid metalorganic/inorganic systems and doped halide thin films for photovoltaics
… is subject of interest in the last years. Hybrid metalorganic/inorganic systems of Eu-complex/NiO films have been developed for the DSSC technology and for the potential improvement of the PV material with new functionalities, that combine the semiconductor behavior of the inorganic part to the …
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Characterization of III-V compound semiconductor heterostructures grown by metalorganic chemical vapor deposition
… no defects, and abrupt interfaces. For this metalorganic chemical vapor deposition (MOCVD) is one of the most important growth methods. In this study, transmission electron microscopy (TEM) was used for the characterization of epilayer structures grown by the MOCVD technique. High resolution …
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Growth and characterization of ZnSe by metalorganic and gas source molecular beam epitaxy
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1994.
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Surface chemistry of metal oxide materials: from metalorganic and organic reactions to gas sensing
Metal oxide materials have been widely used in the fields of catalysis and gas sensing fields. Due to its unique physical and chemical properties, zinc oxide (ZnO) has attracted considerable attention. It is not only used as a catalyst for various surface reactions but also as a catalytic support. …
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