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Showing 1 to 20 of 29 for “"metal-insulator-semiconductor"”.
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Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
… as the gate insulator. Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) as the gate insu-lator. The capacitance spectra …
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Dielectric reliability in GaN metal-insulator-semiconductor high electron mobility transistors
GaN Metal Insulator Semiconductor High Electron Mobility Transistors (GaN MIS-HEMTs) show excellent promise as high voltage power transistors that can operate efficiently at high temperatures and frequencies. However, current GaN technology faces several obstacles, one of which is Time-Dependent …
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High-bias studies on metal-insulator-metal and metal-insulator-semiconductor tunnel junctions
… oxide interface can be thought of as a narrow ""semiconductor transition region"" separating the metal and the oxide. The aluminum-aluminum oxide interface is adequately characterized by a shallow impurity band. The high-bias behavior of silicon junctions is qualitatively described in terms of …
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Growth and electronic properties of gallium arsenide and germanium metal insulator semiconductor structures
The metal insulator semiconductor (MIS) structure is arguably the most technologically important type of solid in existence. The microelectronics revolution of the last thirty years is made possible largely due to the ability to realize extremely high quality metal/SiO$\sb2$/Si metal oxide …
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Dielectric reliability in high-voltage GaN metal-insulator-semiconductor high electron mobility transistors
… power management applications. The AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) constitutes the most suitable device structure for this application as it offers lower gate leakage than its HEMT counterpart. GaN has excellent material properties, but …
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Electron Interactions With Local and Resonant Mode Phonons in Metal - Insulator -Semiconductor Tunnel Junctions
Made available in DSpace on 2015-05-12T22:38:42Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7121221.PDF: 3366996 bytes, checksum: 9591afd038bec2dc367f211b8b3e6b7b (MD5) Previous issue date: 1971
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Time dependent dielectric breakdown in novel GaN metal-insulator-semiconductor high electron mobility transistors
… into mainstream electric vehicles. Recently, GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have been increasing in popularity for high voltage power electronics applications because they combine high electron mobility with low gate leakage, increasing efficiency. …
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Deposition and Characterization of Silicon Nitride/gallium Arsenide Metal Insulator Semiconductor Structures With Heteroepitaxial Interlayers
… Electrical measurements examining the insulator/semiconductor interface are complemented by in situ analyses such as reflection high electron energy diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy as well as ex situ spectroscopic ellipsometry and high …
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A metal-insulator-semiconductor study of the bulk and surface properties of Hg₁₋ Cd Te.
Thesis. 1977. M.S.--Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
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Stability Investigation of Silicon Nanowire Solar Cells
… cells' nanowire active layer used here. The metal insulator semiconductor structure in which the semiconductor is made of Silicon nanostructures is used in this work to study and investigate the Silicon nanostructure's stability. The back contact and oxidation layer optimisation process have …
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Preparation and characterization of in situ deposited metal-insulator-III-V semiconductor devices
… and characterization of in-situ deposited III-V semiconductor-based Metal-Insulator-Semiconductor (MIS) devices are described. The two III-V semiconductors investigated were $\rm In\sb{0.53}Ga\sb{0.47}As$ and GaAs. The problems related to air exposure of the semiconductor surface in ex-situ …
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Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications
… work demonstrates high-performance BN/β-Ga2O3 metal-insulator-semiconductor Schottky barrier diodes (MIS SBDs). The BN layer is directly grown on the β-Ga2O3 by pulsed laser deposition (PLD). The presence of a ~2.8 nm BN layer is confirmed by a series of techniques, including X-ray …
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Design and fabrication of field-effect III-V Schottky junction solar cells
… shown and proved. Schottky solar cells based on metal-(insulator)-semiconductor (M-I-S) structure have been designed and fabricated using various wide bandgap semiconductors, such as GaAs and Al<sub>0.3</sub>Ga<sub>0.7</sub>As. A secondary bias layer has been introduced to the device structure, …
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Tunneling spectroscopy in p-type silicon
Tunneling in boron doped p-type silicon metal-semiconductor and metal-insulator-semiconductor tunnel junctions has been studied at low temperatures by measuring the derivatives, di/dV and d2i/dV2, of the current-voltage characteristics as functions of applied bias voltage V. The junctions were …
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Electrical properties of various single-wall carbon nanotube networks
… of cut-SWCNT LbL networks integrated into metal- insulator-semiconductor devices are discussed in view of organic memory device applications.
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Atomic layer deposition Al2O3-passivated AlGaN/GaN high-electron-mobility transistors on Si(111) towards reliable high-speed electronics
… resistance of 4 × 10-6 Ω–cm2 with Ti/Al/Ni/Au metal stacks has been achieved by three-step rapid thermal annealing. Furthermore, it is revealed that annealed, thin-Al2O3 dielectric is an effective (Al)GaN surface passivation alternative for minimizing passivation-associated parasitic …
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Research and development of CdS/CdTe solar cells incorporating ZnTe layers.
… known as 'two-sixers' from periodic table. The semiconductors are cadmium sulfide (CdS), cadmium telluride (CdTe) and zinc telluride (ZnTe).All of these layers were obtained by growing them using electrodeposition in aqueous solutions. In this project, electrodeposition using 2-electrode system …
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Nanoparticle-based Organic Energy Storage with Harvesting Systems
… The storage devices are made out of an organic semiconductor material and charge storage elements from synthesized nanoparticles. The semiconducting polymer is obtained by blending poly (vinyl alcohol) and poly (acrylic acid) in crystal state polymers with a known plasticizer; glycerol or …
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The Effect of Morphology on Carrier Dynamics in Solution Processed Solar Cells
… via Linearly Increasing Voltage (photo-CELIV), Metal Insulator Semiconductor-CELIV (MIS-CELIV), and Resistance Photovoltage (RPV) are detailed.</p> <p>The photo-CEILV technique is used to probe P3HT devices of varying molecular weights. This material is known to have a microstructure which …
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Dynamic ON-resistance in high voltage GaN field-effect-transistors
… Secondly, high-voltage GaN-on-Si MIS (Metal-Insulator-Semiconductor) HEMTs designed for > 600 V switching operation have been investigated. Excessive electron trapping leading to total current collapse has been observed. We have carried out an extensive characterization of this …
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