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Showing 1 to 19 of 19 for “"metal-assisted chemical etching"”.

  1. Metal-assisted chemical etching of 4H silicon carbide

    Metal-assisted chemical etching (MacEtch) is a wet etching method that can produce high aspect ratio nanostructures with minimal crystal damage. The MacEtch process has been demonstrated to overcome limitations of dry and wet etching in several materials, studied extensively since its discovery by …

    uiuc Repository record for Metal-assisted chemical etching of 4H silicon carbide (opens in a new tab)

  2. Metal-assisted chemical etching of β-gallium oxide

    … surface due to high-energy ions, while most wet etching techniques can only produce very limited aspect ratios. In this thesis, β-Ga2O3 fin arrays by inverse metal-assisted chemical etching (MacEtch), under UV light irradiation, with a high aspect ratio and excellent surface quality, are …

    uiuc Repository record for Metal-assisted chemical etching of β-gallium oxide (opens in a new tab)

  3. Metal-assisted chemical etching of semiconductor nanostructures for electronic applications

    Metal-assisted Chemical Etching (MacEtch) is a robust and versatile top-down etching process which has the capability of overcoming the limits of conventional wet and dry etching. The advantage of producing anisotropic high aspect ratio micro- and nanostructures with the absence of ion induced …

    uiuc Repository record for Metal-assisted chemical etching of semiconductor nanostructures for electronic applications (opens in a new tab)

  4. Metal-assisted chemical etching of III-V semiconductor materials for optoelectronic applications

    Made available in DSpace on 2016-03-02T19:33:17Z (GMT). No. of bitstreams: 2 ZHAO-THESIS-2015.pdf: 2077971 bytes, checksum: 160453c3994747e9326d0908a0f90983 (MD5) LICENSE.txt: 4207 bytes, checksum: badcc874098be4440f0e37e192b9525d (MD5) Previous issue date: 2015-10-07

    uiuc Repository record for Metal-assisted chemical etching of III-V semiconductor materials for optoelectronic applications (opens in a new tab)

  5. Metal-assisted chemical etching of β-gallium oxide and its device applications

    Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2024-12-01

    uiuc Repository record for Metal-assisted chemical etching of β-gallium oxide and its device applications (opens in a new tab)

  6. Metal-assisted chemical etching as a disruptive platform for multi-dimensional semiconductor sculpting

    The student, Karthik Balasundaram, submitted this Dissertation for approval on 2015-06-18 at 16:07.

    uiuc Repository record for Metal-assisted chemical etching as a disruptive platform for multi-dimensional semiconductor sculpting (opens in a new tab)

  7. Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability

    Metal-assisted chemical etching (MacEtch), a wet etching method developed in 2000, has been the focus of extensive research in the area of semiconductor nanotechnology for the last decade, mainly in Si. In principle, MacEtch can be applicable to the other semiconductors if there exists a …

    uiuc Repository record for Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability (opens in a new tab)

  8. Metal-assisted chemical etching of III-V semiconductors for advanced optoelectronic device fabrication

    … modules in semiconductor processing including etching have been extensively explored and implemented for a wide variety of device structures. One of the most novel techniques for etching semiconductors is metal-assisted chemical etching (MacEtch), a plasma-free wet etching method that utilizes …

    uiuc Repository record for Metal-assisted chemical etching of III-V semiconductors for advanced optoelectronic device fabrication (opens in a new tab)

  9. Nonlithographic manufacturing of 1-D silicon nanostructures with tunable surface morphology via thermal dewetting and metal-assisted chemical etching

    … Au mesh on Si substrates. Followed by metal-assisted chemical etching (MacEtch), where the Au mesh serves as catalyst, arrays of smooth Si nanowires with tunable taper are produced. By using the Le Chatelier Principle, the rate of reduction relative to that of oxidation is increased by …

    uiuc Repository record for Nonlithographic manufacturing of 1-D silicon nanostructures with tunable surface morphology via thermal dewetting and metal-assisted chemical etching (opens in a new tab)

  10. Tikslinis fotovoltinių silicio prietaisų savybių keitimas, panaudojant gilų paviršiaus tekstūrinimą ir dvimatės medžiagos dangas /

    … methods for silicon surface modification using metal-assisted chemical etching and CVD grown two-dimensional material coatings. The modifications were performed with photovoltaic devices in mind. Single-step copper-assisted chemical etching was used to texture the silicon surface, which allowed …

    vilnius Repository record for Tikslinis fotovoltinių silicio prietaisų savybių keitimas, panaudojant gilų paviršiaus tekstūrinimą ir dvimatės medžiagos dangas / (opens in a new tab)

  11. INFLUENCE OF STRUCTURAL AND CHEMICAL ASYMMETRY OF NANOSTRUCTURES ON THE KINETICS OF WETTING

    … of nanostructures with either structural or chemical asymmetry was studied. Structurally anisotropic Si nanostructures were obtained by fabricating elliptical nanofins using interference lithography and metal assisted chemical etching. Chemically anisotropic nanostructures, on the other hand, …

    nus Repository record for INFLUENCE OF STRUCTURAL AND CHEMICAL ASYMMETRY OF NANOSTRUCTURES ON THE KINETICS OF WETTING (opens in a new tab)

  12. The effect of surface roughness on thermal and acoustic phonon transport in nanowires and nanomembranes

    … silicon nanowires fabricated using a two-step, metal-assisted chemical etch. Using experimentally characterized surface roughness, we show that a multiple scattering theory is able to explain the observed low-temperature trends in thermal conductivity without employing any fitting parameters. A …

    uiuc Repository record for The effect of surface roughness on thermal and acoustic phonon transport in nanowires and nanomembranes (opens in a new tab)

  13. Effect of phonon transport on the Seebeck coefficient and thermal conductivity of silicon nanowire arrays

    … explores the thermoelectric properties of electrochemically etched silicon nanowires through experiments, complemented by charge and thermal transport theories. Electrolessly etched silicon nanowires show anomalously low thermal conductivity that has been attributed to the increased scattering of …

    uiuc Repository record for Effect of phonon transport on the Seebeck coefficient and thermal conductivity of silicon nanowire arrays (opens in a new tab)

  14. Vertical silicon nanowire arrays for gas sensing

    … patterned areas have been fabricated utilizing metal assisted chemical etching (MACE) in combination with interference lithography. In addition, we report a novel and simple approach for making reliable top electrical contacts by using tilted electron beam evaporation with a custom-built …

    mit Repository record for Vertical silicon nanowire arrays for gas sensing (opens in a new tab)

  15. Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques

    The aggressive downscaling of complementary metal–oxide–semiconductor (CMOS) technology is facing great challenges to overcome severe short-channel effects. Multigate MOSFETs are one of the most promising candidates for scaling beyond Si CMOS, due to better electrostatic control as compared to …

    uiuc Repository record for Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques (opens in a new tab)

  16. Silicon Nanowires the Route from Synthesis towards Applications

    … are reported. The realization of Si NWs by metal assisted chemical etching (MACE) by the use of discontinuous Au layers and the relationship among structural features and growth conditions are here discussed in detail. Indeed, the NW length, diameter, crystalline structure and doping can be …

    catania Repository record for Silicon Nanowires the Route from Synthesis towards Applications (opens in a new tab)

  17. Fabrication of capacitors based on silicon nanowire arrays generated by metal-assisted wet chemical etching

    … develop an understanding of the mechanisms of metal assisted wet chemical etching for fabrication of arrays of silicon nanowires, and then use this understanding to build nanowire array on-chip capacitors in silicon substrates, in order to eliminate additional packaging and enable local and …

    mit Repository record for Fabrication of capacitors based on silicon nanowire arrays generated by metal-assisted wet chemical etching (opens in a new tab)

  18. Non-lithographic and scalable manufacturing of silicon micro & nanomaterials

    … of new platforms that allow for integration of metals, polymers, oxides, composites, nanomaterials and biomaterials hierarchically across length scales ranging from centimeters down to nanometers. However, nanomanufacturing platforms are still plagued by a trade-off between throughput and …

    uiuc Repository record for Non-lithographic and scalable manufacturing of silicon micro & nanomaterials (opens in a new tab)