Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 9 of 9 for “"m-plane"”.
-
AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates
… diodes are grown and fabricated using the c-plane III-nitride expitaxy layers. In c-plane III-nitride epi-layers, the polarization-induced electric field introduces spatial separation of electron and hole wave functions in quantum wells (QW)s used LEDs and laser diodes LDs and degrades …
-
MULTISCALE MODELING OF III-NITRIDE CORE-SHELL SOLAR CELLS
… care was taken in incorporating the nonpolar m-plane crystallographic orientation within the simulator via appropriate lattice vectors, rotational matrices, neighboring atom co-ordinates and sp3-hybridized passivation scheme. Numerical calculations of electronic structure properties are …
-
Efficiency droop mitigation and quantum efficiency enhancement for nitride Light-Emitting Diodes
… to (1) efficiency droop investigations on m-plane and c-plane LEDs: enhanced matrix elements in m-plane LEDs and smaller hole effective mass favors the hole transport across the active region so that m-plane LEDs exhibit 30% higher quantum efficiency and negligible efficiency droop at high …
-
Growth, processing and chracterization of gallium nitride based coaxial LEDs grown by MOVPE
… of these LEDs is located on non-polar, {1-100} m-plane GaN sidewalls, which helps eliminate the quantum confined Stark effect (QCSE) and improve the radiative recombination efficiency of LEDs. The recent evolution of a catalyst free, scalable, repeatable and industrially viable device quality GaN …
-
CRYSTAL STRUCTURE ENGINEERING FOR IMPROVED PERFORMANCE OF EMERGING NANOSCALE DEVICES
… In(Ga)N/GaN disk-in-wire LED structures having c-plane and m-plane wurtzite crystal symmetry. (3) Coupling the NEMO 3-D software toolkit with a commercial TCAD simulator to determine the terminal electrical and optical characteristics of InGaN/GaN disk-in-wire LEDs; and (4) Finding an optimum …
-
A study of the elastic and electronic properties of III-nitride semiconductors
… carrier localisation effects in both c- and m-plane InGaN based QWs. For the case of zincblende InGaN, shortcomings in the currently used semi-empirical methods of strain and atomic relaxation are pointed out and quantified. The development of an improved framework for the analysis of the …
-
Higher-Dimensional Analogues of Two Theorems of Orponen on Exceptional Sets
… $\dim_{\mathrm H} A = s$ and, for each $m$-plane $V$ in the Grassmannian $\mathbf{Gr}(n,m)$, let $\pi_V : \mathbb{R}^n \to V$ be the orthogonal projection of $\mathbb{R}^n$ onto $V$. \textit{Marstrand's projection theorem} states that $\dim_{\mathrm H} \pi_V(A) = \min \, \{s,m\}$ for almost …
-
Investigating the role of ionised outflows in galactic evolution through spatially resolved spectroscopy
… on or above the ’Main Sequence’ in the SFR-M∗ plane, suggesting the importance of starbursts for star formation-driven outflows. AGN-driven outflows exist on and below the main sequence, suggesting their efficiency at driving outflows in all types of galaxy. By studying the gas density through …
-
Development of Iii-Nitride Non-Polar Leds and Self-Aligned Laser Structure
<p>Light Emitting Diodes (LEDs) are finding numerous applications in several commercial systems because they have unique properties. LEDs are more energy efficient, robust, small in size, very reliable and are sustainable in hazardous environmental conditions making them a good substitute for …