Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 68 for “"low-k"”.
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Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration
The shift to the Cu/low-k interconnect scheme requires the development of diffusion barrier/adhesion promoter materials that provide excellent performance in preventing the diffusion and intermixing of Cu into the adjacent dielectrics. The integration of Cu with low-k materials may decrease RC …
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Resistive Switching in Porous Low-k Dielectrics
Integrating nanometer-sized pores into low-k ILD films is one of the approaches to lower the RC signal delay and thus help sustain the continued scaling of microelectronic devices. While increasing porosity of porous dielectrics lowers the dielectric constant (k), it also creates many reliability …
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Hydrophobic, fluorinated silica xerogel for low-k applications.
… integrated circuit applications due to their low dielectric constant and high mechanical properties (i.e., Young's modulus (E) and hardness (H)). Co-condensing with TEFS, linear structures from DMDES hydrolysis and condensation reactions rendered hybrid films hydrophobic, and cyclic structures …
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Electrical studies of silicon and low K dielectric material
… powerful characterization technique that allows one to explore electrical and physical properties of defects in bulk and interface of electronic materials. Capacitance-Voltage (CV) measures the overall net carrier concentration and a built-in voltage for a diode junction. Deep level …
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Structural Design and Optimization of 65nm Cu/low-k Flipchip Package
… with fully active and functional 9-metal Cu/ low-k layers and 150um interconnect pitch. The low-k material used in this study is non-porous SiCOH with a k value of 2.9. A parametric study using 2D plane strain finite element analysis was performed to study the effect of various parameters on …
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Characterization of low k CVD deposited interlayer dielectrics for integrated circuits
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1997.
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Scaling and process effect on electromigration reliability for Cu/low k interconnects
… (Al) by copper (Cu) and oxide dielectric by low-k dielectric. Electromigration (EM) turned out to be a serious reliability problem for Cu interconnects due to the implementation of mechanically weaker low-k dielectrics. In addition, line width and via size scaling resulted in the need of a …
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ULTRA-LOW K DIELECTRIC MATERIALS WITH HIGH BREAKDOWN STRENGTH AND EXCELLENT MECHANICAL PROPERTIES
… As electronic devices move to further scales lower in size, the problems associated with fabrication become more ubiquitous. This thesis focuses on Covalent organic frameworks, a recently discovered two-dimensional polymer as a promising material for low permittivity material and its …
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Effects of mechanical properties on the reliability of Cu/low-k metallization systems
Cu and low-dielectric-constant (k) metallization schemes are critical for improved performance of integrated circuits. However, low elastic moduli, a characteristic of the low-k materials, lead to significant reliability degradation in Cu-interconnects. A thorough understanding of the effects of …
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Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics
… thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and octamethylcyclotetrasiloxane precursors were used, with oxygen and hydrogen peroxides oxidants respectively, to deposit low-k organosilicon films. …
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Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process
In an effort to lower interconnect time delays and power dissipation in highly integrated logic and memory nanoelectronic products, numerous changes in the materials and processes utilized to fabricate the interconnect have been made in the past decade. Chief among these changes has been the …
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Establishment and characterisation of chemoresistant osteosarcoma cell lines by single and multi-agent induced strategies
… includes neo-adjuvant chemotherapy followed by surgical removal and adjuvant multi-drug chemotherapy. The combination of cisplatin, doxorubicin and high-dose methotrexate is the standard treatment for most patients. Surgery combined with chemotherapy has improved the survival rate for …
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Determining the Preston constants of low-dielectric-constant polymers
… and to measure the Preston constants of four low-dielectric-constant (low-k) polymers, labeled A, B, C, and D, and Cu. A weight-loss method, which measures the weight difference between the initial wafer and the polished wafer, provided repeatable results. The Preston constants ranged from …
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Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition
Use of low relative dielectric constant (low-k) material as an interlayer dielectric is among important approaches to reduce the RC time delay in high performance ultra-large-scale integrated circuits. Copper metallization is another approach besides the use of low-k material, in reducing the RC …
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Environmentally focused patterning and processing of polymer thin films by initiated chemical vapor deposition (iCVD) and oxidative chemical vapor deposition (oCVD)
… management requirements for EHS friendly low-k processing require a 10% annual increase in raw materials utilization. Initiated Chemical Vapor Deposition (iCVD) is a low-energy, one step, solvent-free process for producing polymeric thin films This thesis describes the deposition of a …
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Characterizaton of Triethoxyfluorosilane and Tetraethoxysilane Based Aerogels
Aerogels are highly porous, low dielectric constant (low k) materials being considered by the semiconductor industry as an interlayer dielectric. Low k materials are needed to overcome capacitance problems that limit device feature sizes. Precursors triethoxyfluorosilane (TEFS) and …
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Modelling the impact of total stress changes on groundwater flow
… impact of total stress changes on groundwater flow in the vicinity of a salt tailings pile. Total stress and pore-pressure data observed at the Lanigan and Rocanville potash-mine sites were used to assist the development of a generic FEMWATER model. The original 3-D mesh considered for model …
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Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates
… identified the integration of copper (Cu) with low-dielectric-constant (low-k) materials as a critical goal for future interconnect architectures. A fundamental understanding of the chemical interaction of Cu with various substrates, including diffusion barriers and adhesion promoters, is …
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Characterization and molecular cloning of sos3: A gene important for salt tolerance and potassium nutrition in higher plants
… hypersensitive to Na⁺ and unable to grow with low K⁺. Increased Ca²⁺ levels can partially suppress the growth defect of the mutant plants under salt stress and fully restore their growth under low K⁺. These results suggest that SOS3 may be a Ca²⁺-mediated regulator that controls K⁺ and Na+ …
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Direct and inverse turbulent cascades in a 2D Bose gas
… isotropy at high-k from an anisotropic low-k drive, and the spatiotemporal scaling of the power-law spectrum in the pre-steady-state dynamics. The second experiment probes the bidirectional relaxation dynamics of an isolated out-of-equilibrium system. We observe universal scaling in the …
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