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Showing 1 to 7 of 7 for “"low k materials"”.

  1. Characterizaton of Triethoxyfluorosilane and Tetraethoxysilane Based Aerogels

    Aerogels are highly porous, low dielectric constant (low k) materials being considered by the semiconductor industry as an interlayer dielectric. Low k materials are needed to overcome capacitance problems that limit device feature sizes. Precursors triethoxyfluorosilane (TEFS) and …

    unt Repository record for Characterizaton of Triethoxyfluorosilane and Tetraethoxysilane Based Aerogels (opens in a new tab)

  2. Effects of mechanical properties on the reliability of Cu/low-k metallization systems

    Cu and low-dielectric-constant (k) metallization schemes are critical for improved performance of integrated circuits. However, low elastic moduli, a characteristic of the low-k materials, lead to significant reliability degradation in Cu-interconnects. A thorough understanding of the effects of …

    mit Repository record for Effects of mechanical properties on the reliability of Cu/low-k metallization systems (opens in a new tab)

  3. Transparent Tissues and Porous Thin Films: A Brillouin Light Scattering Study

    <p>The elastic properties of materials composed of thin laminar structures control a broad range of phenomena in diverse systems. For example, elasticity affects the response of tissues in the eye that control the focusing of light, while strains within nano-scale films and coatings in the next …

    ohiolink Repository record for Transparent Tissues and Porous Thin Films: A Brillouin Light Scattering Study (opens in a new tab)

  4. Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates

    … identified the integration of copper (Cu) with low-dielectric-constant (low-k) materials as a critical goal for future interconnect architectures. A fundamental understanding of the chemical interaction of Cu with various substrates, including diffusion barriers and adhesion promoters, is …

    unt Repository record for Adhesion/Diffusion Barrier Layers for Copper Integration: Carbon-Silicon Polymer Films and Tantalum Substrates (opens in a new tab)

  5. Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration

    The shift to the Cu/low-k interconnect scheme requires the development of diffusion barrier/adhesion promoter materials that provide excellent performance in preventing the diffusion and intermixing of Cu into the adjacent dielectrics. The integration of Cu with low-k materials may decrease RC …

    unt Repository record for Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration (opens in a new tab)

  6. Applications for nanomaterials in critical technologies

    … synthesis, properties, and applications of nano materials for critical technologies, including three areas: (1) Microbial contamination of drinking water is a serious problem of global significance. About 51% of the waterborne disease outbreaks in the United States can be attributed to …

    uiuc Repository record for Applications for nanomaterials in critical technologies (opens in a new tab)

  7. Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process

    In an effort to lower interconnect time delays and power dissipation in highly integrated logic and memory nanoelectronic products, numerous changes in the materials and processes utilized to fabricate the interconnect have been made in the past decade. Chief among these changes has been the …

    vt Repository record for Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process (opens in a new tab)