Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 20 of 164 for “"leakage current"”.

  1. Investigations into leakage current variation in titanium dioxide dielectrics

    <p>"Initial study of leakage currents in TiO₂ showed that the leakage current varies and can increase significantly with time. The increase is considered a degradation of the material if it is to be used as a dielectric. Because of this, a more complete study of single crystal and polycrystalline …

    must-thes Repository record for Investigations into leakage current variation in titanium dioxide dielectrics (opens in a new tab)

  2. Direct liquid injection metalorganic chemical vapor deposition of ferroelectric PZT films

    … the hysterisis loop symmetric and to reduce the leakage current of PZT films. The present DLI-MOCVD grown PZT films showed good ferroelectric properties. Two-remanent polarization from 20 to 50 µC/cm² and two-coercive field from 60 to 100 Kv/cm can be easily obtained from these PZT films which …

    vt Repository record for Direct liquid injection metalorganic chemical vapor deposition of ferroelectric PZT films (opens in a new tab)

  3. Titanium dioxide dielectric layers made by anodization of titanium: the effect of dissolved nitrogen and oxygen

    … oxide and its properties, particularly the leakage currentdensity. The best diffusion treatment condition to decrease the leakage current densityfor Grade 1 Ti was found to be infusion at 1133 K (860 °C) for 22 ks. Under this condition, nitrogen and oxygen were managed to infuse into Ti as …

    ohiolink Repository record for Titanium dioxide dielectric layers made by anodization of titanium: the effect of dissolved nitrogen and oxygen (opens in a new tab)

  4. Design of Energy Efficient SOC With PIM Architecture and Deep Submicron Circuit Techniques

    To tackle problems such as tremendously increased leakage current and power consumption due to the scaled threshold voltage of the transistor and increased number of gates in future VLSI chips, sub-1-V circuit techniques to suppress leakage current while meeting performance requirement are …

    uiuc Repository record for Design of Energy Efficient SOC With PIM Architecture and Deep Submicron Circuit Techniques (opens in a new tab)

  5. Degradation mechanisms of barium titanate based thick film capacitors

    … with the porous high K dielectric material. The leakage current of a thick film capacitor made from Ag/Pd thick film conducting paste and high K dielectric has shown ohmic and space charge limited current behavior with a 3/2 power voltage dependence. Voltage independence of thermal activation …

    vt Repository record for Degradation mechanisms of barium titanate based thick film capacitors (opens in a new tab)

  6. Fabrication and characterization of germanium-on-silicon photodiodes

    … of Ge-on-Si photodiodes, especially the dark current. Low-pressure chemical vapor deposition was used to deposit thick (1 - 2 [mu]m) films on silicon substrates either selectively in oxide windows or in blanket films. Photodetectors were fabricated in both types of films and their optical and …

    mit Repository record for Fabrication and characterization of germanium-on-silicon photodiodes (opens in a new tab)

  7. Synthesis and Characterization of Titanium Zirconium Based Alloys for Capacitor Use

    … to improve the electrical behavior by reducing leakage through anodically grown oxide film on binary alloys via microstructure modifications. It also examines creep of Ti25Zr38Be37 metallic glass for surface enhancement. A variety of mechanical and electrical properties were measured. Leakage

    ohiolink Repository record for Synthesis and Characterization of Titanium Zirconium Based Alloys for Capacitor Use (opens in a new tab)

  8. Atomic layer deposition Al2O3-passivated AlGaN/GaN high-electron-mobility transistors on Si(111) towards reliable high-speed electronics

    … passivating (Al)GaN surfaces, and reducing leakage currents are of great importance. In this dissertation, these challenges are individually addressed along with respective detailed studies. It is shown that a low GaN in-plane tensile strain allows a higher 2D electron gas mobility due to …

    uiuc Repository record for Atomic layer deposition Al2O3-passivated AlGaN/GaN high-electron-mobility transistors on Si(111) towards reliable high-speed electronics (opens in a new tab)

  9. Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

    … design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic …

    calpoly Repository record for Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors (opens in a new tab)

  10. Electrical Breakdown of Thermal Spray Alumina Ceramic Applied to AlSiC Baseplates Used in Power Module Packaging

    … that use alumina ceramic as an isolation layer. Current processes use direct bond copper (DBC) soldered to a nickel plated copper heat spreader. A coefficient of thermal expansion (CTE) mismatch exists between copper and alumina and leads to reliability issues that arise due to product failure …

    vt Repository record for Electrical Breakdown of Thermal Spray Alumina Ceramic Applied to AlSiC Baseplates Used in Power Module Packaging (opens in a new tab)

  11. Electrical characterization of plasma-enhanced Cvd silicon nitride dielectric on copper

    … capacitance density is 1.5fF/mum2. The target leakage current is 1e-7A/cm2 at 3.3V at 125°C. The maximum operating voltages that the MIM is designed for is 5V. The voltage linearity is desired to be less than 100ppm/v; The purpose of the study is to determine the feasibility of integrating …

    unlv Repository record for Electrical characterization of plasma-enhanced Cvd silicon nitride dielectric on copper (opens in a new tab)

  12. Fabrication and characterization of avalanche photodetectors

    … density array of APDs over a large area. Dark current and photocurrent uniformity of the array are characterized. Leakage current is also analyzed in terms of dark current and cross-talk by examining APDs with different mesa diameters and different separations, respectively. For these results, …

    uiuc Repository record for Fabrication and characterization of avalanche photodetectors (opens in a new tab)

  13. A Study Of Structure-Property Correlation In V2o5 And Tio2 Based Thin Films As Functional Materials

    … of its very high dielectric constant. We studied leakage characteristics, the dielectric strength and frequency dependent behavior of dielectric constant of TiO2 thin films prepared by MOD, sputter deposition and annealed at different temperatures. We find dielectric constant increasing with the …

    wayne-thes Repository record for A Study Of Structure-Property Correlation In V2o5 And Tio2 Based Thin Films As Functional Materials (opens in a new tab)

  14. Systematics of bond length and radii variations in fluoride and silicate molecules and crystals

    … such as hysteresis properties, fatigue, leakage current, time dependent dielectric breakdown (TDDB) and retention, were studied with regard to the Zr/Ti ratio, the excess lead, the annealing temperature, the electrode material and the doping amount. Furthermore, the pyrochlore to …

    vt Repository record for Systematics of bond length and radii variations in fluoride and silicate molecules and crystals (opens in a new tab)

  15. Electrical properties of doped and undoped PZT thin films prepared by a sol-gel method

    … such as hysteresis properties, fatigue, leakage current, time-dependent dielectric breakdown (TDDB), and retention, were studied with regard to the Zr/Ti ratio, the excess lead, the annealing temperature, the electrode material, and the doping amount. Furthermore, the pyrochlore to …

    vt Repository record for Electrical properties of doped and undoped PZT thin films prepared by a sol-gel method (opens in a new tab)

  16. Transformer-Less Common Gro Nine-Level Grid-Connected Boost Inverter for PV Panels

    … for solar panels is done. The confinement of leakage current and common mode voltage in non-isolated structures connected to the grid is studied. In the second chapter, the one-cycle control is reviewed in detail. The basics of the control algorithm, as well as the resources review, are …

    claremont Repository record for Transformer-Less Common Gro Nine-Level Grid-Connected Boost Inverter for PV Panels (opens in a new tab)

  17. A Pharmacological Analysis of the Ionic Channels of Nerve

    … of Frankenhaeuser and Dodge. The observed currents were analysed by a computer in terms of the mathematical model of Hodgkin and Huxley. The sodium, the potassium, and the leakage current components and the time constants associated with their changes were calculated. Tetrodotoxin abolished …

    rockefeller Repository record for A Pharmacological Analysis of the Ionic Channels of Nerve (opens in a new tab)

  18. Condition monitoring of SiC MOSFETs on LLC resonant converter

    … of a degraded SiC MOSFET is an increase of gate leakage current, a circuitry is developed to track and estimate the on-state gate leakage current of the device during operation. To demonstrate the functionality of the proposed method, an LLC full-bridge resonant converter that operates at a …

    uiuc Repository record for Condition monitoring of SiC MOSFETs on LLC resonant converter (opens in a new tab)

Page 1 of 9