Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 47 for “"lattice constant"”.
-
Lattice Constant, Thermal Expansion, and Isothermal Compressibility Measurements on Argon Single Crystals
Made available in DSpace on 2015-05-12T21:41:33Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 6511853.PDF: 2268007 bytes, checksum: f4e592dad4b4f3cc162cbd1ce6e95168 (MD5) Previous issue date: 1965
-
Lattice constant, thermal expansion, and isothermal compressibility measurements on argon single crystals
The lattice constant of an argon single crystal has been measured as a function of temperature with a precision, back-reflection x-ray diffractometer. From this determination the total thermal expansion and the coefficient of thermal expansion have been obtained. Also', a preliminary measurement …
-
Isotopic effects in the lattice constant, thermal expansion, and isothermal compressibility of neon single crystals
Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-05-19T15:26:37Z No. of bitstreams: 1 1965_batchelder.pdf: 4389532 bytes, checksum: 3826a0acc0723f6ec6797d713af6cb55 (MD5)
-
First principles calculations on ZnO non-equilibrium phase
… approximation have been studied and applied. The lattice constant has been obtained by performing full relaxation within the DFT approximation. With the DFT optimized structure, we calculated the band structures and band gaps for both phases. We have found an about 0.2 eV larger band gap for BN …
-
Fabrication and characterization of perpendicular magnetic anisotropy thin-film CoCrPt grown on a Ti underlayer
… required for PMA functionalities. Ti, with a lattice constant of a = 2.95 Å can be used to encourage uniaxial c-axis growth in CoCrPt (lattice constant a ~/= 2.55 Å, dependent on exact composition). In this report, varying thicknesses of Ti (t = 0, 20, 40, 60, 70, 80, 90, 100nm) and CoCrPt (t …
-
III-V compositionally graded buffers for heterostructure integration
… the range of InyGa₁-yAs compositions which are lattice matched to elementary or binary semiconductor substrates. Additionally, the integration of InyGa₁-yAs based devices on silicon substrates has been limited by complicated processing procedures. In order to resolve these issues we developed …
-
Strain relaxation mechanism of semiconductor thin films
… film growth. Even though there is lattice mismatch between substrate and film, pseudomorphic film growth is usually possible at the initial stage of growth, so the film is grown under strain. However, it becomes energetically favorable to introduce misfit dislocations above a …
-
Liquid phase epitaxial growth and heterointerface characteristics of long-wavelength indium gallium arsenide phosphide heterostructures
… demonstrate that the InGaAsP quaternary grown by constant temperature liquid phase epitaxy on InP substrate can, under certain growth conditions, exhibit considerably narrower diffraction profile half-widths than previously reported. The double crystal x-ray diffraction half-width is a relatively …
-
Ultra-High B Doping During Si(1-X)ge(x)(001) Gas-Source Molecular-Beam Epitaxy: A Mechanistic Study of Layer Growth Kinetics, Dopant Incorporation, Electrical Activation, and Carrier Transport
… were detected by HR-XRD or TEM. The out-of-plane lattice constant a⊥ decreases linearly with increasing C*B and non-linearly, for CB > C*B . Electrical properties are in good agreement with theoretical values to C*B . When thetaB > thetaB,sat, B accumulates in the upper layer, and a parallel …
-
Lifshitz transitions in RCo5 (R=Y, La) and in Osmium
… it exhibits the following anisotropy: while the lattice constant in the hexagonal plane is almost smoothly contracting with increasing pressure, the lattice constant in c-direction collapses at the transition-pressure. This volume collapse has been verified in experiment. Analogous calculations …
-
Development of predictable palladium based optomechanical hydrogen sensors
… of the metal, as well as an increase in lattice constant in the presence of hydrogen. The change in complex refractive index plays a role in both reflection/transmission, and for determining resonances or guided modes in waveguides and other sub-wavelength features. However, the increase …
-
Phonon spectra and thermal properties of some fcc metals using embedded-atom potentials /
… of states, such as the temperature dependence of lattice constant, coefficient of linear thermal expansion, isothermal and adiabatic bulk moduli, heat capacities at constant volume and constant pressure, Griineisen parameter and Debye temperature. The computed results are compared with the …
-
Theory and optimisation of metamorphic photonic devices
… – in which a “virtual” substrate with a desired lattice constant is obtained by growing a lattice-mismatched metamorphic buffer layer (MBL) on a conventional substrate such as InP or GaAs – is beginning to attract increasing interest due to its potential to facilitate the development of improved …
-
The c33 elastic constant of MoS2 as a function of pressure and the deposition of multilayer thin films by sputtering
The c33 elastic constant of exfoliated MoS2 flakes was measured up to 11 GPa using a diamond anvil cell and picosecond interferometry. The resulting elastic constants were similar those predicted by hybrid density functional theory calculations by Peelaers and Van de Walle, but lower than those …
-
Substrate and channel engineering for improving performance of strained-SiGe MOSFETs
… A relaxed SilGe. graded buffer creates a larger lattice constant on a Si substrate while providing low threading dislocation densities (TDD) on the order of 105 cm-2. For many III-V devices on Si, such as high-efficiency multi-junction solar cells, the SiGe graded buffer approach is hindered …
-
III-V optoelectronic devices in the BGaInAs material system
… potential of direct-bandgap, III-V materials for lattice-matched absorbers and emitters on silicon. Leveraging the small lattice constant of the boron pnictides, BGaInAs can be grown lattice-matched or nearly lattice-matched to Si; however, the difficult growth mechanics of elemental boron and the …
-
Growth of Single Crystal, Metastable Ge(1-X)sn(x) Alloys and Ge(1-X)sn(x)/ge Strained-Layer Superlattices on Ge(001)2 X 1 by Molecular Beam Epitaxy
… $\rm Ge\sb{1-x}Sn\sb{x}$/Ge strained-layer superlattices (SLS) with x up to 0.24 (the equilibrium solid solubility of Sn in Ge is $<$0.01) were also grown on Ge(001)2x1 substrates using temperature-modulated molecular-beam epitaxy with maximum growth temperatures $\rm T\sb{s}\leq140\sp\circ$C. …
-
X-ray analysis of the time-softening property of a lead tin alloy
… which might be apparent as a change in the lattice constant of the crystal; and (3) conductivity measurements as a further check on whether the solution concentration was changing. The results accordingly may be classified under the same three headings. The change in hardness of the lead-tin …
-
Hypersonic phononic crystals
… bilayer pairs is investigated as a function of a lattice constant and composition using Brillouin light scattering and numerical simulations. This set of relatively simple multilayer structures represents an excellent platform to gain a basic understanding of phononic band gap phenomena. In …
-
Epitaxial growth and characterization of hexagonal boron nitride for deep UV applications
… detector applications. Its similar in-plane lattice constant to graphene and chemical inertness and resistance to oxidation makes hBN an ideal material for the exploration of Van der Waals heterostructures made layer by layer between hBN/graphene related materials with new physics and …
Page 1 of 3