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Showing 1 to 20 of 96 for “"laser diodes"”.

  1. MBE-grown long wavelength InGaAlAs/InP laser diodes

    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.

    mit Repository record for MBE-grown long wavelength InGaAlAs/InP laser diodes (opens in a new tab)

  2. GaN-based distributed feedback laser diodes and their applications

    … an increasing push to develop single frequency laser diodes (LDs) operating in the visible region of the electromagnetic spectrum, arising from the various potential applications, most notably in atomic cooling, visible light communication (VLC), medical diagnostics, and spectroscopy. This …

    qu-belfast Repository record for GaN-based distributed feedback laser diodes and their applications (opens in a new tab)

  3. Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes

    More efficient semiconductor lasers will be needed in tomorrow's applications. These lasers can only be realized through the application of new device processing techniques, designed to restrict current, carrier, and/or photon flow through the lasing cavity. This work aims to evaluate a …

    vt Repository record for Fabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodes (opens in a new tab)

  4. Photonic crystal based widely tunable laser diodes and integrated optoelectronic components

    … of photonic crystal based widely tunable laser diodes and their monolithic integration with photonic crystal based passive waveguide and coupler structures is explored theoretically and experimentally. In these devices, the photonic crystal is operated in the photonic bandgap which can be …

    wurz-thes Repository record for Photonic crystal based widely tunable laser diodes and integrated optoelectronic components (opens in a new tab)

  5. Mode-locked laser diodes for the 750 – 770 nm spectral region

    Ultrashort pulse lasers are widely used in research, industry, medicine, and communications, because of their characteristics of narrow pulse width, high repetition frequency, broad spectrum and high peak power. They are influencing and changing our world. Mode-locking is an effective way to …

    dundee Repository record for Mode-locked laser diodes for the 750 – 770 nm spectral region (opens in a new tab)

  6. Fabrication and performance of broad-area high power narrow linewidth semiconductor laser diodes

    … feedback (DFB) grating, semiconductor laser diodes for the goal of manufacturably attaining longitudinal mode reduction. Through coupled-mode theory, the coupling coefficient, the reflectivity, and the laser emission linewidth resulting from a refractive index grating are predicted. A …

    uiuc Repository record for Fabrication and performance of broad-area high power narrow linewidth semiconductor laser diodes (opens in a new tab)

  7. Adaptive Pre-Distort.ion for Laser Diodes with Direct Modulation Frequencies up to 1 GHz

    … that work with inexpensive intensity-modulated laser systems so that any FTTH service can be economically delivered. In this thesis, a previously developed model for a semiconductor laser has been simulated using a SPICE-based software tool. Also, for the purpose of achieving acceptable linear …

    sask Repository record for Adaptive Pre-Distort.ion for Laser Diodes with Direct Modulation Frequencies up to 1 GHz (opens in a new tab)

  8. Native Oxides on Aluminum-Bearing Iii-V Semiconductors With Applications to High-Performance Laser Diodes

    In these experiments, water vapor oxidation of Al-bearing III-V semiconductors is employed to form high quality native oxides. The oxides are examined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). The effect of the semiconductor composition and …

    uiuc Repository record for Native Oxides on Aluminum-Bearing Iii-V Semiconductors With Applications to High-Performance Laser Diodes (opens in a new tab)

  9. Laser diode-to-singlemode fiber butt-coupling and extremely-short-external-cavity laser diodes: Analysis, realization and applications

    The butt-coupling of a Fabry-Perot semiconductor laser diode and a singlemode optical fiber was realized and characterized in the near field. A novel butt-coupling model was developed and found very effective in describing all physical phenomena that occur when the butt-coupling parameters are …

    arizona-thes Repository record for Laser diode-to-singlemode fiber butt-coupling and extremely-short-external-cavity laser diodes: Analysis, realization and applications (opens in a new tab)

  10. Coaxial recess integration of InGaAs edge emitting laser diodes with waveguides on silicon substrates : a complete solution to laser integration on ICs

    … of 1.55[mu]m InGaAs/InP edge emitting platelet laser diodes with SiON/SiO2 dielectric waveguides on a silicon substrate is presented. Small footprint laser platelets (300[mu]m long by 150[mu mwide and 6.3[mu]m high), are integrated and bonded in recesses etched in SiO2 deposited on a Si …

    mit Repository record for Coaxial recess integration of InGaAs edge emitting laser diodes with waveguides on silicon substrates : a complete solution to laser integration on ICs (opens in a new tab)

  11. Wavelength Modification by Thermal Annealing and Stripe Geometry Definition by Impurity-Induced Disordering in Quantum-Well Laser Diodes (Diffusion, Gallium-Arsenide, Iii-v Semiconductors)

    … annealing ((TURN)900(DEGREES)C) on quantum-well laser diode properties are investigated. The shift to higher energies caused by inter-diffusion of Al and Ga at the quantum-well interfaces in modeled by a modified Poschl-Teller potential. The interdiffusion coefficient D(Al-Ga) is found to be on …

    uiuc Repository record for Wavelength Modification by Thermal Annealing and Stripe Geometry Definition by Impurity-Induced Disordering in Quantum-Well Laser Diodes (Diffusion, Gallium-Arsenide, Iii-v Semiconductors) (opens in a new tab)

  12. III-V Bismide Optoelectronic Devices

    … type-I InGaAsSb/AlGaInAsSb quantum well laser diodes in 3-4 um mid-wavelength range, the lasing wavelength and performance of the devices are limited due to the lack of hole confinement in the active regions. In this dissertation, a novel GaSb-based GaInAsSbBi material is proposed to …

    arkansas Repository record for III-V Bismide Optoelectronic Devices (opens in a new tab)

  13. Numerical Simulation and Experimental Investigation of Quantum Dash Lasers at Elevated Temperatures: Design and Operation of Monolithic InAs/InP Quantum Dash Ridge Laser Diodes Operating in the C-Band

    … a mode-locked ridge waveguide quantum dash laser. Quantum dash and dot gain media both exhibit spontaneous mode-locking, reduced sensitivity of their performance to temperature, and lower threshold current densities. Dashes additionally offer higher peak gain and broader gain bandwidths, but …

    ottawa-retro Repository record for Numerical Simulation and Experimental Investigation of Quantum Dash Lasers at Elevated Temperatures: Design and Operation of Monolithic InAs/InP Quantum Dash Ridge Laser Diodes Operating in the C-Band (opens in a new tab)

  14. Temperature and Spatial Hole Burning Effects in Semiconductor Lasers and Integrated Optical Devices

    … are investigated in long-wavelength InP-based lasers and integrated optical devices, including Fabry-Perot (FP) lasers, distributed-feedback (DFB) lasers, and integrated electroabsorption modulator with DFB lasers (EML). First, the temperature dependence of bulk InGaAsP semiconductor laser

    uiuc Repository record for Temperature and Spatial Hole Burning Effects in Semiconductor Lasers and Integrated Optical Devices (opens in a new tab)

  15. Bipolar thermoelectric devices

    … particular attention is given to semiconductor laser diodes. The mechanisms that govern both internal heat exchange and heat transfer between a device and its environment are examined, leading to structures which are optimized for thermal management.

    mit Repository record for Bipolar thermoelectric devices (opens in a new tab)

  16. Visible-Spectrum Indium-Gallium - Phosphide - Arsenide Lasers and High-Pressure Measurements on Quantum-Well Heterostructure Lasers

    … quantum-well heterostructure (QWH) laser diodes and on AlAs-GaAs and Al(,x)Ga(,1-x)As-GaAs superlattices (SL's) are described. The growth and characterization of visible-light emitting In(,1-x)Ga(,x)P-In(,1-x)Ga(,x)P(,1-z)As(,z) heterostructures grown on GaAs(,1-y)P(,y) substrates …

    uiuc Repository record for Visible-Spectrum Indium-Gallium - Phosphide - Arsenide Lasers and High-Pressure Measurements on Quantum-Well Heterostructure Lasers (opens in a new tab)

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