Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 8 of 8 for “"junction-to-case thermal resistance"”.
-
Packaging of Enhancement-Mode Gallium Nitride High-Electron-Mobility Transistors for High Power Density Applications
… nitride (GaN) high-electron-mobility transistors (HEMTs) are favored for their smaller specific on-resistance, lower switching losses, and higher theoretical temperature limits as compared to traditional silicon (Si) power switches. They have the potential to dramatically increase the power …
-
A High Temperature Wideband Power Amplifier for a Downhole Communication System
As the oil industry continues to drill deeper to reach previously untapped wells, the operating environments for electronic systems become harsher, especially due to high temperatures. It is essential to design electronic circuits and systems to be able to withstand these extreme temperatures. The …
-
Double-Sided Liquid Cooling for Power Semiconductor Devices Using Embedded Power Technology
… of research for this area. Power semiconductors present some of the major challenges for increasing system level power density due to high loss density and interconnection requirements. Advanced cooling schemes, such as double-sided, forced liquid convection or multi-phase flow, can be …
-
Reliability Evaluation of Large-Area Sintered Direct Bonded Aluminum Substrates for Medium-Voltage Power Modules
This thesis investigates techniques for prototyping and evaluation of medium voltage (MV) power module packages. Specific focus will be given to the utilization of silver sintering as a bonding method for high temperature, high density power modules. Nano-silver paste and preform will be examined …
-
PCB-Based 1.2 kV SiC MOSFET Packages for High Power Density Electric Vehicle On-Board Chargers
Global energy consumption continues to grow, driving the need for cheap, power-dense power electronics. Replacing the incumbent silicon insulated gate bipolar transistors with silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) has been proposed as a solution to …
-
Multifaceted Codesign for an Ultra High-Density, Double-Sided Cooled Traction Inverter Half Bridge Module
The automotive sector finds itself undergoing a significant and substantial transformation, propelled by the pronounced proliferation of electric vehicles (EVs) and autonomous driving technologies. As the industry proactively adapts to embrace this, an increasingly pressing demand becomes evident …
-
Field-Grading in Medium-Voltage Power Modules Using a Nonlinear Resistive Polymer Nanocomposite Coating
Medium-voltage silicon carbide power devices, due to their higher operational temperature, higher blocking voltage, and faster switching speed, promise transformative possibilities for power electronics in grid-tied applications, thereby fostering a more sustainable, resilient, and reliable …
-
Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
… Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of 4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this ultra-wide bandgap is the high-temperature stability due to the low intrinsic carrier concentration. …