Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 34 for “"junction temperature"”.
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The Study of the Forward-Voltage to Junction-Temperature Coefficient Degradation in Light-Emitting Diodes
… of a LED are heavily dependent on the junction temperature of the LED. Thermal management for LEDs has become an important field study for LEDs. Unfortunately, as the LEDs grow smaller and more integrated, it becomes impossible at times to directly measure their junction temperature. …
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Junction temperature estimation via plug-in system for the design validation of IGBT industrial power converters
L'abstract è presente nell'allegato / the abstract is in the attachment
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Design and Development of High Density High Temperature Power Module with Cooling System
… alternative that pushes the limitations of junction temperature, power rating, and switching frequency of Si devices. These advanced properties will lead converters to higher power density. However, the reliability of the SiC semiconductor is still under investigation, and at the same time, …
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Assessing the performance and reliability of GaN based electronics via optical and electrical methods
… of performance parameters such as the gate junction temperature is thus necessary to accurately assess the device's quality and lifetime. Until now Raman thermometry has shown to be the most accurate method to estimate the junction temperature. This method, however, is limited to a point …
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A High Temperature Wideband Power Amplifier for a Downhole Communication System
… systems become harsher, especially due to high temperatures. It is essential to design electronic circuits and systems to be able to withstand these extreme temperatures. The proposed power amplifier (PA) has been designed for a downhole communication system operating at an ambient temperature …
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Packaging of Enhancement-Mode Gallium Nitride High-Electron-Mobility Transistors for High Power Density Applications
… lower switching losses, and higher theoretical temperature limits as compared to traditional silicon (Si) power switches. They have the potential to dramatically increase the power density and efficiency of power electronics systems by replacing traditional Si-based switches. However, GaN HEMTs …
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A SiC JFET-Based Three-Phase AC PWM Buck Rectifier
… three-phase power converters, offering increased junction temperature, low specific on-resistance, fast switching, and low switching loss. These characteristics are desirable for increasing power density, providing faster system dynamics, and improving power quality. At present, the normally-on …
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Measurement of Thermal Impedance of Deep Ultraviolet Light Emitting Diodes
… 320 nm, are prone to self-heating. This rise in temperature during normal operation leads to early saturation of the light output power of these devices at relatively low injection currents and degrades their external quantum efficiency. Furthermore, this high heat dissipation also decreases the …
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Integrated Electro-thermal Design Methodology in Distributed Power Systems (DPS)
… of semiconductor device power loss and junction temperature in an iterative process. However these dependencies are important, especially for applications where both cooling and power losses are driven by complex mechanisms. For a power supply system, a dynamic design process is …
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Thermal Analysis, Parasitic Extraction, and Wirebond Reliability Studies of Power Electronic Modules
… parameters such as power dissipation, maximum junction temperature, ambient temperature, convection coefficient required to cool the module, size of the baseplate, heat-sink size, substrate size, spacing between dies, and different materials that can be used for the power electronic module. …
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Thermal and Thermo-Mechanical Analyses of Wire Bond vs. Three-dimensionally Packaged Power Electronics Modules
… modeling results show a significantly lower junction temperature of 17oC in the MPIPPS module than that in the wire bond module, due to the more uniform heat flow distribution in the MPIPPS module. The top DBC (direct bonded copper) substrate in the MPIPPS module helps direct the excessive …
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Investigation of Power Semiconductor Devices for High Frequency High Density Power Converters
… requirements like limited space and high ambient temperature etc. This needs the power converter to achieve high power density and high temperature operation. It is usually required that the active power devices operate at higher switching frequencies to shrink the passive components volume. The …
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Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
… of GaN HEMTs under high-power and high-temperature stress have been studied. A novel technique to extract activation energy of degradation rate from measurements on a single device has been proposed. High-power and high-temperature stress has revealed two sequential degradation …
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Design of a High Temperature GaN-Based VCO for Downhole Communications
… quickly on the rise. This paper presents a high temperature VCO for downhole communication system. The proposed VCO is designed and prototyped using 0.25 μm GaN on SiC RF transistor which has extremely high junction temperature capability. Measurements show that the proposed VCO can operate …
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A High Temperature Wideband Low Noise Amplifier
… required to operate at extreme pressures and temperatures. Coupled with substantial real-time data targets, the need for robust high speed electronics is quickly on the rise. This paper presents a high temperature wideband low noise amplifier (LNA) with zero temperature coefficient maximum …
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Submicron Scaling of Indium Phosphide/indium Gallium Arsenide Heterojunction Bipolar Transistors Toward Terahertz Bandwidths
… reliability is also investigated, focusing on junction temperatures of high current density SHBTs. A novel method for determining the thermal resistance of an HBT is presented, correcting the considerable error obtained by classical theoretical predictions. The relationships between junction …
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Double-Side Cooled 3.3 kV, 100 A SiC MOSFET Phase-Leg Modules for Traction Applications
… showed a parasitic inductance of 2.89 nH and junction temperature of 108.3 °C at a heat flux of 156 W/cm² under a typical water-cooling condition. Electric field simulations identified high electric field stress at the module's outer surface edges exposed to air, posing a risk for partial …
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Packaging designs for ultraviolet light emitting diodes
… on the removal of this heat and reduction of the junction temperature. This is achieved by decreasing the package thermal resistance from junction-to-air with cost-effective solutions. The use of heat sinks, thermal interface materials, and high conductivity heat spreaders is instrumental in the …
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Thin film technology for optoelectronics and their thermal management
… is very important in order to control the junction temperature effectively. Here, the laser-lift-off (LLO) technique was theoretically and experimentally studied. The temperature distribution at the III-nitride/sapphire interface induced by absorption of 248-nm KrF excimer energetic laser …
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Electric-thermal modelling of power electronics components
… using the parameters based on steady state temperature and seldom take into account the thermal effect in power loss modelling of the component and thermal coupling between the components. However, these electric-thermal dependencies are important, particularly for applications where …
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