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Showing 1 to 1 of 1 for “"junction barrier controlled Schottky (JBS)"”.
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High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
… diodes, such as, buried p-base merged p-i-n Schottky (BP-MPS) and buried p-base merged p-i-n junction barrier controlled Schottky (BP-MPJ) diodes capable of reducing leakage current by about five orders of magnitude compared to corresponding p-islet MPS (PI-MPS) diode designs, have been …