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Showing 1 to 6 of 6 for “"irradiated silicon"”.

  1. Recombination Luminescence in Irradiated Silicon

    Submitted by Yan Wang (yanwang3@illinois.edu) on 2010-06-24T22:51:52Z No. of bitstreams: 1 1967_spry.pdf: 3669717 bytes, checksum: 2902addd3a0bad595e749cc994305e5a (MD5)

    uiuc Repository record for Recombination Luminescence in Irradiated Silicon (opens in a new tab)

  2. Recombination lifetimes in gamma-irradiated silicon

    … were measured as a function of temperature in silicon before and after irradiation at room temperature by cobalt 60 gamma rays. The resistivity of the boron doped samples ranged between 10 and 5000 ohm-cm, and the resistivity of the phosphorus doped samples was between 20 and 220 ohm-cm. Both …

    uiuc Repository record for Recombination lifetimes in gamma-irradiated silicon (opens in a new tab)

  3. Infrared absorption of neutron irradiated silicon

    In this work the infrared absorption of neutron irradiated silicon was compared to that of non-irradiated silicon at room and liquid nitrogen temperatures. It was found that instead of the 1.75 micron absorption band that has been mentioned in numerous papers transmission was completely cut off …

    vt Repository record for Infrared absorption of neutron irradiated silicon (opens in a new tab)

  4. The effect of stress on the luminescence spectrum of irradiated silicon

    Silicon crystals which have been irradiated with neutrons, high energy electrons, or gamma-rays at room temperature show two strong luminescence bands in the near infrared. Both bands have a sharp zero-phonon line followed by a series of broad phonon assisted peaks. The higher energy band …

    uiuc Repository record for The effect of stress on the luminescence spectrum of irradiated silicon (opens in a new tab)

  5. Recombination luminescence in irradiated silicon: Effects of thermal annealing and lithium impurity

    Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-05T21:59:28Z No. of bitstreams: 1 1971_johnson.pdf: 6554176 bytes, checksum: 1ea97249e78866141ef86dbffbcb1226 (MD5)

    uiuc Repository record for Recombination luminescence in irradiated silicon: Effects of thermal annealing and lithium impurity (opens in a new tab)

  6. A theoretical and experimental investigation of the annular jet ground effect machine

    In this work the infrared absorption of neutron irradiated silicon was compared to that of non-irradiated silicon at room and liquid nitrogen temperatures. It was found that instead of the 1.75 micron absorption band that has been mentioned in numerous papers transmission was completely cut off …

    vt Repository record for A theoretical and experimental investigation of the annular jet ground effect machine (opens in a new tab)