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Showing 1 to 8 of 8 for “"ionized physical vapor deposition"”.
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Ionized Physical Vapor Deposition of Aluminum Oxide
Made available in DSpace on 2017-07-06T18:55:08Z (GMT). No. of bitstreams: 3 Li_Ning_MS.pdf: 51415629 bytes, checksum: c29c8d58534efcdd114931c9fc6f3d8d (MD5) Li_Ning_MS_ABS.pdf: 619486 bytes, checksum: 41ecf59db6588595b2e30243525fce36 (MD5) license.txt: 4813 bytes, checksum: …
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Diagnostics for ionized physical vapor deposition chambers
… diagnostics are needed to accurately predict the deposition profile of features on the wafer. Traditionally, the incident ion fluxes are considered to be perfectly normal to the wafer plane due to the electric field of the plasma sheath. However from simulation results the ion flux from a …
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Secondary Plasma Sources for Ionized Physical Vapor Deposition
… fractions to the substrate of 51 +/- 10% with a deposition rate of 847 +/- 42 A/min. are found. Without the antenna, the ionization fraction is 30 +/- 6% and the deposition rate is 815 +/- 41 A/min. This remote source is envisioned to sit six or more around a sputtering chamber, which can help …
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Multiscale modeling of thin film deposition processes
Ionized physical vapor deposition (IPVD) and electrochemical deposition (ECD) are two major thin film deposition processes in the microelectronics industry. The ion fluxes with high kinetic energies in IPVD process involve complex surface interactions that affect overall topology of the microscale …
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Multiscale modeling of chemical vapor deposition and plasma etching
… simulations is presented. Finally, a study of ionized physical vapor deposition of aluminum is presented as an example of atomistic-continuum linking. Molecular dynamics simulations are used to represent atomistic events. The Molecular Dynamics results are summarized in a manner that allows the …
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Linear magnetron high deposition rate magnet pack for high power impulse magnetron sputtering
… method that has proven to be a promising ionized physical vapor deposition (PVD) technique, with industrial implementation hindered by low deposition rates. HiPIMS applies high voltages and high currents at low duty cycles to the sputtering target in order to achieve very high power …
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Comparison of high power impulse magnetron sputtering and modulated pulsed power sputtering for interconnect metallization
Ionized physical vapor deposition is used to deposit the barrier and seed layers in the state of the art interlevel metallization process. As the critical dimension keeps shrinking, it has become increasingly difficult to use the current techniques to form thin, continuous and stable barrier/seed …