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Showing 1 to 10 of 10 for “"interstitial oxygen"”.

  1. An ultrasonic study of trapped hydrogen in niobium

    … for the configuration of hydrogen trapped at interstitial oxygen or nitrogen impurities in BCC metals. Such a model would 'be important for an understanding of the physical properties of such systems, particularly of the quantum diffusion effects which occur. A review of all the available data …

    uiuc Repository record for An ultrasonic study of trapped hydrogen in niobium (opens in a new tab)

  2. Electrochemical and Modelling Studies on Simulated Spent Nuclear Fuel Corrosion under Permanent Waste Disposal Conditions

    … clustering of defects, enhanced diffusion of OI (interstitial oxygen)to deeper locations and destabilization of the fluorite lattice. A further investigation of the doping effect was performed on a series of (U1−yGdy)O2 materials (y = 0, 0.01, 0.03, 0.05, 0.07 and 0.10). Overall the increase in …

    uwo Repository record for Electrochemical and Modelling Studies on Simulated Spent Nuclear Fuel Corrosion under Permanent Waste Disposal Conditions (opens in a new tab)

  3. Investigation of the Superconducting Properties of Niobium Radio-Frequency Cavities

    … It was found that baking allows interstitial oxygen to diffuse from the surface deeper into the bulk. This produces a significant reduction of the normal electrons' mean free path, which causes an increase of the quality factor. The optimum baking parameters are 120°C for 24-48 h. …

    odu Repository record for Investigation of the Superconducting Properties of Niobium Radio-Frequency Cavities (opens in a new tab)

  4. Fundamental studies of perovskite related oxide thin films for oxygen electrocatalysis at intermediate temperatures

    … currently utilized for applications including oxygen permeation membranes and solid oxide fuel cells (SOFCs), but alternative materials with higher catalytic activity and stability are required for intermediate temperature (500 - 700 °C) oxide electrocatalysts. In this thesis, two promising …

    mit Repository record for Fundamental studies of perovskite related oxide thin films for oxygen electrocatalysis at intermediate temperatures (opens in a new tab)

  5. Multiscale Modeling of Effects of Solute Segregation and Oxidation on Grain Boundary Strength in Ni and Fe Based Alloys

    … non-metallic solute elements (C, P, Si), their interstitial forms are also studied but the effects are weaker than their substitutional counterparts. Nickel-base alloys are also susceptible to stress corrosion cracking (SCC), in which the fracture mainly propagates along oxidized grain …

    vt Repository record for Multiscale Modeling of Effects of Solute Segregation and Oxidation on Grain Boundary Strength in Ni and Fe Based Alloys (opens in a new tab)

  6. Syntheses, Characterizations, and Properties of Suboxides and Layered Titanium-based Pnictide Oxide Superconductors

    We investigated the effects of oxygen interstitial in the phase Ce3Si2Ox. The binary Ce3Si2 was found to exhibit antiferromagnetic behavior, with the Neel temperature of TN = 8 K. The oxygen interstitial phase, Ce3Si2O0.82 was found to be paramagnetic. This indicates that the introduction of oxygen

    houston Repository record for Syntheses, Characterizations, and Properties of Suboxides and Layered Titanium-based Pnictide Oxide Superconductors (opens in a new tab)

  7. Superconductivity in oxygen doped iron telluride by molecular beam epitaxy

    … by can become one when doped with oxygen. In this investigation, we developed the growth recipe of thin film iron telluride by Molecular Beam Epitaxy (MBE). We found the growth to be self-regulated, similar to that of GaAs. The initial layers of growth seem to experience a …

    uiuc Repository record for Superconductivity in oxygen doped iron telluride by molecular beam epitaxy (opens in a new tab)

  8. Dislocation related defects in silicon and gallium nitride.

    … as impurity gettering centres. Additionally, the interstitial oxygen inherent in Czochralski (Cz) silicon can be made to segregate to dislocation cores by specific bending and annealing conditions to increase the mechanical hardness of wafers. This process is termed dislocation locking. In this …

    sheffield-hallam Repository record for Dislocation related defects in silicon and gallium nitride. (opens in a new tab)

  9. Surface-mediated mechanisms for defect engineering in zinc oxide

    … zinc oxide, the concentration and diffusion of oxygen point defects, like interstitials and vacancies, play a central role in various physical phenomena, such as gas sensing, bipolar switching, photoluminescence and photocatalysis. Defect engineering in metal oxides aims at manipulating material …

    uiuc Repository record for Surface-mediated mechanisms for defect engineering in zinc oxide (opens in a new tab)

  10. Surface-mediated mechanisms for defect engineering in metal oxides

    … of solid point defects such as vacancies and interstitial atoms influence the performance of metal oxides in gas sensing, electronics, photonics and solar-induced photochemistry for fuel production and environmental cleanup. Controlling these aspects of defect behavior has become increasingly …

    uiuc Repository record for Surface-mediated mechanisms for defect engineering in metal oxides (opens in a new tab)