Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 20 for “"interface formation"”.
-
GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing
In previous studies, device quality Si-SiO2 interfaces and dielectric bulk films (SiO2) were prepared using a two-step process; i) remote plasma-assisted oxidation (RPAO) to form a superficially interfacial oxide (~0.6 nm) and ii) remote plasma enhanced chemical vapor deposition (RPECVD) to deposit …
-
Investigation on fabrication, interface formation, and properties of hot-processed titanium-doped copper/diamond composites
… lattice vibrations. To address these challenges, interface engineering strategies such as pre-coating diamond particles or pre-alloying the copper matrix with carbide-forming elements (e.g., Ti, W, Zr, Cr, B) have been extensively explored. Among these, titanium has shown promise through the …
-
Defect mediated plasticity in Cu/Ag nanoscale multilayered metal composites: deformation twinning and wavy interface formation
Made available in DSpace on 2013-08-22T16:35:38Z (GMT). No. of bitstreams: 4 Ruizhi_Li.pdf: 2616507 bytes, checksum: dff899bcd8bac69b54dbea75d994edac (MD5) 0_Li_Ruizhi.docx: 28848935 bytes, checksum: 4c460173b168128b9fb90f0828607c49 (MD5) Li_Ruizhi.docx: 28848935 bytes, checksum: …
-
Initial stages of interface formation between group III, IV, and V elements and Si and Ge surfaces
The initial stages of interface formation between various group III, IV, and V adsorbates and the Si and Ge surfaces have been examined with high resolution angle-integrated and angle-resolved photoemission spectroscopy using synchrotron radiation. The Si 2p and Ge 3d surface-shifted core level …
-
Initial stages of interface formation between group III, IV, and V elements and silicon and germanium surfaces
The initial stages of interface formation between various group III, IV, and V adsorbates and the Si and Ge surfaces have been examined with high resolution angle-integrated and angle-resolved photoemission spectroscopy using synchrotron radiation. The Si 2p and Ge 3d surface-shifted core level …
-
Dynamic wetting/dewetting processes in complex liquid-solid systems
… models, it was found for the first time that the interface formation model is capable of describing the experimentally observed non-uniqueness of the relationship between the contact-line speed and the dynamic contact angle. It is shown that, the interface formation model naturally captures the …
-
Electronic properties of metal-organic and organic-organic interfaces studied by photoemission and photoabsorption spectroscopy
… are devoted to organic-organic and metal–organic interface formation, where one of the interface components is CuPc thin film. The main results of this thesis are: - The electronic structure of the pristine organic semiconductor CuPc (valence band and empty states) has been obtained by a …
-
Surface and interface studies of compound semiconductors
… of compound semiconductor surfaces and interfaces were studied using experimental techniques such as electron and x-ray diffraction, Auger spectroscopy, synchrotron photoemission, and scanning tunneling microscopy. Some of the surface and interfacial properties this thesis is concerned …
-
INTERFACES IN THIN-FILM SOLID-STATE BATTERIES
The lack of a diagnostics approach to monitor interface kinetics in solid-state batteries (SSBs) results in an incomplete knowledge of the mechanisms affecting device performance. In this study, a new protocol for process control of SSB interface formation and their evolution during operation is …
-
Surface and interface characterisation of high-k dielectric materials on silicon and III-V semiconductor substrates
Interface formation between high-k dielectric oxide materials and semiconductor surfaces is of critical importance to the development of the next generation of high speed semiconductor devices. This thesis investigates the deposition and characterisation of a range of candidate high-k materials on …
-
Determining the surface tension of gas-liquid interfaces through metadynamics
The measurement of surface tension γ provides information on the behaviour of phases at an interface. γ can be determined both experimentally and through computer simulation. Here, a gas-liquid interface is constructed and simulated in order to determine the value of gas-liquid interfacial surface …
-
First principles modelling of tunnel field-effect transistors based on heterojunctions of strained Germanium/InGaAs alloys
… depend on the atomistic details of the interface structure. <br/><br/>First-principles calculations were performed to obtain the band alignments of the simpler Ge/GaAs system. The difference of the Ge and GaAs band gaps, calculated at Many-Body Perturbation Theory (MBPT) level, is added …
-
Scanning tunneling microscopy and photoemission spectroscopy studies of clean and adsorbate-covered semiconductor surfaces
… been used to examine both the initial stages of interface formation between various adsorbates, as well as, reconstructions occurring on the clean surfaces of Si and Ge. The initial stages of oxidation of the Si(111)-(7 x 7) and Ge(111)-c(2 x 8) surfaces were studied. Images of the same area of …
-
The control of metal-NiNGaAs and NiNAlAs interfaces by cryogenic processing.
… physical and chemical properties of In- and Au- interfaces with In[0.53]Ga[0.47]As/InP(100) and In[0.52]Al[0.48]As(100) formed at room and low temperatures have been studied. Current-voltage measurements have indicated that In contacts to Ino[0.53]Ga[0.47]As(100) formed at 80K exhibit …
-
Growth and Characterisation studies of MgO and Mg silicate dielectric layers on Si and InP surfaces
… study was controlling the semiconductor/high-k interface formation, the principle experimental technique used in these studies was x-ray photoelectron spectroscopy (XPS), however, additional techniques such as atomic force microscopy (AFM) and electrical characterisation have also been employed. …
-
Solid-Binding Peptides Enable Biomolecular Surface Assemblies and Mineralization
… blocks in materials synthesis, assembly, and formation. As part of developing these tools for biotechnology, solid-binding peptides found via several methods were used in a variety of proof-of-principle applications. The research herein encompasses: 1. Self-assembly of peptides on solid …
-
Interfacial engineering and alternative device architectures for perovskite photovoltaics
… thin film deposition techniques. Complementary interface formation processes are critical in ABC architectures because the n-type and p-type selective contacts are simultaneously exposed during processing. UV-ozone exposure followed by thermal annealing simultaneously reduced the defect density …
-
Physical Encapsulation of Interface Bilayers
… of biomolecular material system which features interface lipid bilayers capable of hosting a wide variety of natural and engineered proteins. This research builds on the droplet interface bilayer (DIB) platform which first demonstrated that, through self-assembly, lipid-encased water droplets …
-
Investigating Cathode–Electrolyte Interfacial Degradation Mechanism to Enhance the Performance of Rechargeable Aqueous Batteries
… the failure modes at cathode–electrolyte interface and provide strategies for improving the cell capacity and life during prolonged cycling. In Chapter 1, we first provide a background introduction of conventional non-aqueous and aqueous batteries. We then show the current development of …
-
INVESTIGATION OF PHASE TRANSFORMATIONS IN TRANSITION METAL DICHALCOGENIDES DURING SYNTHESIS AND POST GROWTH
… of TMDC-based transistors, engineering the interface with different contact metals (including at elevated temperatures and in the presence of surface oxides) is important to reduce the resulting contact resistance across the interface. Furthermore, the presence of other metals can influence …