Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 9 of 9 for “"injection lasers"”.
-
Liquid-Phase Epitaxial Growth and Properties of Indium-Gallium-Phosphide and Indium-Gallium Phosphide-Arsenide Injection Lasers
Made available in DSpace on 2015-05-13T15:21:57Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7606798.PDF: 3791228 bytes, checksum: f8c19a609446fb74d6eea0f1f0990f94 (MD5) Previous issue date: 1975
-
Liquid-phase-epitaxial growth and properties of indium gallium phosphide and indium gallium phosphide arsenide injection lasers
Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-22T19:29:54Z No. of bitstreams: 1 1975_hitchens.pdf: 4073212 bytes, checksum: 83d0ce7d426078eaafd0df098ca21fa1 (MD5)
-
Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recombination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide
Made available in DSpace on 2015-05-12T22:39:00Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7411966.PDF: 3851014 bytes, checksum: cd1a4a475e1514b2d5520a344358ec96 (MD5) Previous issue date: 1973
-
Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recomination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide
Submitted by Jesse Garrison (jagarris@illinois.edu) on 2011-11-14T19:00:55Z No. of bitstreams: 1 1973_campbell.pdf: 4175372 bytes, checksum: ed3da0d70330dce9e8d913abbf574623 (MD5)
-
High-power semiconductor laser arrays by metalorganic chemical vapor deposition
Semiconductor injection lasers have the capability of producing very high output powers if a large array of diodes can be fabricated. The development of useful high power semiconductor lasers depends on fabrication processes which overcome the problems associated with high power laser operation. …
-
Injection locking characteristics of indium arsenide quantum dash lasers
The study of injection locking characteristics was performed on an InAs Quantum Dash (QDash) semiconductor laser for the first time. The linewidth enhancement factor(α-parameter) of a QDash laser was measured using an injection locking technique that takes advantage of the asymmetry of the …
-
Novel nanolasers, nano-LEDs, and modal cutoff confinement light emitters
Semiconductor metal nanocavity lasers and light emitting diodes together with novel modal cutoff confinement light emitters are investigated for optical interconnection application in future dense photonic integrated circuits. Several different cavity structures are designed, processed, and …
-
MOVPE metamorphic lasers and nanostructures engineering at telecom wavelengths
… in the 1.3-µm spectral range for replacing InP injection lasers in medium range fiber-optic communication links. Scaling considerations apart, the enhanced electronic confinement in GaAs-based devices can be expected to reduce carrier leakage at high temperatures, thereby overcoming one of the …
-
Characterization of the Dynamics of Optically-Injected Nanostructure Lasers
The direct-modulation of semiconductor lasers is the simplest and most compact approach to pass data onto an optical fiber; however, their intrinsic limitations under direct-modulation such as wavelength chirp and inherent relaxation oscillation frequency constraints impede their high-speed and …