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Showing 1 to 2 of 2 for “"inhomogeneous defect densities"”.

  1. A Study of Electron Traps in Vapor Phase Epitaxial Gallium-Arsenide Grown in the Presence of Oxygen (Dlts, Deep Level Transient Spectroscopy, Semiconductors, Defects)

    … includes an accurate treatment of large and inhomogeneous defect densities, and which allows a precise determination of deep level concentrations and activation energies. The design and construction of the automated measurement apparatus are described, and the computer programs for the data …

    uiuc Repository record for A Study of Electron Traps in Vapor Phase Epitaxial Gallium-Arsenide Grown in the Presence of Oxygen (Dlts, Deep Level Transient Spectroscopy, Semiconductors, Defects) (opens in a new tab)

  2. A study of electron traps in vapor phase epitaxial gallium arsenide grown in the presence of oxygen

    … includes an accurate treatment of large and inhomogeneous defect densities, and which allows a precise determination of deep level concentrations and activation energies. The design and construction of the automated measurement apparatus are described, and the computer programs for the data …

    uiuc Repository record for A study of electron traps in vapor phase epitaxial gallium arsenide grown in the presence of oxygen (opens in a new tab)