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Showing 1 to 20 of 64 for “"indium phosphide"”.
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Encapsulation and Implantation Studies of Indium Phosphide
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1982.
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Indium Phosphide Based Indium Arsenide Quantum Dot Infrared Photodetectors
Based on the developed QD growth techniques, photoconductive InAs/InAlGaAs/InP QDIPs grown on InP by MBE technique were presented. These devices demonstrated responses to normal incident photoexcitations in the 5-18-mum range. The QDIP device based on bound-to-bound transitions shows a peak …
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Wideband direct conversion IQ modulators in indium phosphide DHBT technology
… benefits from custom integrated circuits in an indium phosphide double-heterojunction bipolar transistors (InP DHBT) (Low et al. 2005). The highest speed oscilloscopes that are currently available rely on InP DHBT circuits in their frontend and enable a combination of high peak-to-peak voltage …
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Persistent photoconductivity and deep levels in aluminum gallium indium phosphide
The quaternary material aluminum gallium indium prosphide (($\rm Al\sb{x}Ga\sb{1-x})\sb{y}In\sb{1-y}P$) is used in the fabrication of visible lasers and light emitting diodes. There are problems in this material related to the observation of persistent photoconductivity at certain compositions. In …
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Semi-insulating indium phosphide grown with a carbon tetrachloride doping source
Made available in DSpace on 2011-05-07T14:21:31Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9625135.pdf: 3807051 bytes, checksum: 7bf8cacdaf2de061db1c74c508219314 (MD5) Previous issue date: 1996
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Aluminum gallium indium phosphide quantum wire heterostructures and photonic device applications
Restriction data tranferred 2014-07-01T11:30:46-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission
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Experimental and theoretical investigation of indium phosphide quantum dot growth mechanisms
Indium phosphide (InP) quantum dots (QDs) stand out as the most promising candidate to replace the currently commercialized cadmium-containing materials for optoelectronic applications. This thesis focuses on using experimental and theoretical methods to study growth mechanisms of InP QDs from …
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Indium phosphide based integrated photonic devices for telecommunications and sensing applications
… this thesis. These devices are fabricated in the indium phosphide (InP) material system, which includes InP and the ternary/quaternary III-V semiconductors that can be grown closely lattice-matched on the InP substrate. The all-optical logic gate is designed as a Mach-Zehnder interferometer with …
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Submicron Scaling in Indium Phosphide/indium Gallium Arsenide Single Heterojunction Bipolar Transistors
Measurement-based characterization of SHBTs scaled down to 0.35 mum was performed, and detailed understanding of do and RF scaling properties was developed. Important scaling phenomena that emerge as the emitter width is scaled to the deep submicron regime were identified and analyzed. A unique …
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Low-temperature magnetophotoluminescence characterization of high-purity gallium arsenide and indium phosphide
"Low-temperature magneto-photoluminescence is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding …
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The Experimental Determination of Impact Ionization Coefficients in Gallium-Arsenide and Indium Phosphide
Embargo set by: Seth Robbins for item 78563 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs
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Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability
Metal-assisted chemical etching (MacEtch), a wet etching method developed in 2000, has been the focus of extensive research in the area of semiconductor nanotechnology for the last decade, mainly in Si. In principle, MacEtch can be applicable to the other semiconductors if there exists a …
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The experimental determination of impact ionization coefficients in gallium arsenide and indium phosphide
Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-09T18:20:16Z No. of bitstreams: 1 1983_bulman.pdf: 7262557 bytes, checksum: 5e01c853d20714818374ece7733a0de6 (MD5)
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Low temperature magneto-photoluminescence characterization of high purity gallium arsenide and indium phosphide
"Low-temperature magneto-photoluminescence is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding …
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High efficiency luminescent solar concentrator with interconnected gallium indium phosphide micro solar cells
Photovoltaics (PV) technology is one of the most important sources of renewable energy due to its abundant availability, low cost, and compatibility with multiple production scales from residential to utility. As the efficiency of the traditional silicon photovoltaics approaches its theoretical …
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Submicron Scaling of Indium Phosphide/indium Gallium Arsenide Heterojunction Bipolar Transistors Toward Terahertz Bandwidths
This work extends the operating speed of InP HBTs to frequencies of fT = 604 GHz though aggressive delay reductions and advanced fabrication processes. Delay reduction is employed by a combination of vertical scaling, lateral scaling, and epitaxial engineering to reduce the transit and charging …
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Dynamic Range Analysis and High-Speed Integrated Circuit Designs Using Indium Phosphide HBT Technology
Two integrated circuits using InP DHBT technology have been demonstrated with the aid of the accurate large-signal and noise models developed in this work. The true logarithmic amplifier shows the bandwidth of 22 GHz, which is significantly higher than the previous 6 GHz in literature. This circuit …
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Nonthemal plasma synthesis of indium phosphide nanocrystals and electrical properties of doped silicon nanocrystal films.
… (NCs). Two systems of nanocrystals were studied, indium phosphide and doped silicon. A new method of synthesis of InP NCs is presented. It represents a new route for the synthesis of high quality compound semiconductor NCs. Additionally the electronic properties of doped silicon NCs were studied …
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Large Signal HBT Model and Integrated Circuit Design Using 300-Ghz Indium Phosphide HBT Technology
This work describes a modeling approach including the nonlinear effects in the base-collector region covering current blocking, velocity modulation and self-heating. Model is verified in terms of single devices and integrated circuits. Good fitting to the measured DC and high-frequency data from …
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