NDLTD logo NDLTD Union Catalog and Global ETD Search

Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 9 of 9 for “"indium gallium phosphide arsenide"”.

  1. Visible-Spectrum Indium Gallium Phosphide Arsenide Heterostructure Lasers

    Chin, RaymondUniversity of Illinois at Urbana-Champaign2014

    The growth, fabrication and luminescence characteristics of wide-gap In(,1-x)Ga(,x)P(,1-z)As(,z) double heterojunction lasers and of single and multiple quantum-well lasers are examined.

    uiuc Repository record

  2. Near-Infrared Indium-Gallium Phosphide-Arsenide Double Heterojunction Lasers

    Wright, Phillip DouglasUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:46Z (GMT). No. of bitstreams: 1 7804200.pdf: 3291865 bytes, checksum: ce6e38a15de39527abc38a543f50830f (MD5) Previous issue date: 1977

    uiuc Repository record

  3. Indium-Gallium Phosphide-Arsenide - Gallium Arsenide-Phosphide Single Heterojunction Lasers

    Coleman, James JosephUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:13Z (GMT). No. of bitstreams: 1 7606730.pdf: 2847725 bytes, checksum: 538397f02a07c1415ab059d85212392e (MD5) Previous issue date: 1975

    uiuc Repository record

  4. Indium-Gallium Phosphide-Arsenide Double Heterojunction Lasers and Defect Tunneling

    Ludowise, Michael JosephUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:38Z (GMT). No. of bitstreams: 1 7726705.pdf: 3460480 bytes, checksum: 32ba591f66c7d9269700fee65ffaf1ef (MD5) Previous issue date: 1977

    uiuc Repository record

  5. Visible-Spectrum Indium-Gallium - Phosphide - Arsenide Lasers and High-Pressure Measurements on Quantum-Well Heterostructure Lasers

    Kirchoefer, Steven WilliamUniversity of Illinois at Urbana-Champaign2014

    Hydrostatic pressure studies on metalorganic chemical vapor deposition (MO-CVD) grown Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructure (QWH) laser diodes and on AlAs-GaAs and Al(,x)Ga(,1-x)As-GaAs superlattices (SL's) are described. The growth and characterization of visible-light emitting …

    uiuc Repository record

  6. Liquid-Phase Epitaxial Growth and Properties of Indium-Gallium-Phosphide and Indium-Gallium Phosphide-Arsenide Injection Lasers

    Hitchens, William RobertUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-13T15:21:57Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7606798.PDF: 3791228 bytes, checksum: f8c19a609446fb74d6eea0f1f0990f94 (MD5) Previous issue date: 1975

    uiuc Repository record

  7. Liquid Phase Epitaxial Growth and Luminescence Characteristics of Indium Gallium Phosphide Arsenide - Indium Phosphide Quantum-Well Heterostructures

    Rezek, Edward AnthonyUniversity of Illinois at Urbana-Champaign2014

    Since the development of practical semiconductor devices, most work has concentrated on changing the device geometry to suit particular design constraints. However, within the last several years there has been an attempt to build an entirely new class of devices by modifying the electronic str

    uiuc Repository record

  8. Liquid-phase-epitaxial growth and properties of indium gallium phosphide and indium gallium phosphide arsenide injection lasers

    Hitchens, William Robert2012

    Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-22T19:29:54Z No. of bitstreams: 1 1975_hitchens.pdf: 4073212 bytes, checksum: 83d0ce7d426078eaafd0df098ca21fa1 (MD5)

    uiuc Repository record

  9. Indium-Gallium - Phosphide-Arsenide Quantum-Well Heterostructure Lasers Grown on Gallium-Arsenide Substrate by Liquid Phase Epitaxy (Miscibility)

    Fuller, Brian KeithUniversity of Illinois at Urbana-Champaign1984

    Light emitting In(,1-x)Ga(,x)P(,1-z)As(,z)-In(,1-x')Ga(,x')P(,1-z')As(,z')quantum-well heterostructure platelet lasers grown on (100) GaAs substrate that are capable of operating continuously at room temperature (cw, 300 K) at a wavelength of 7700 (ANGSTROM), but with a limited operating life, as …

    uiuc Repository record