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Showing 1 to 20 of 25 for “"indium gallium phosphide"”.

  1. Liquid-Phase Epitaxial Growth and Properties of Indium-Gallium-Phosphide and Indium-Gallium Phosphide-Arsenide Injection Lasers

    Hitchens, William RobertUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-13T15:21:57Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7606798.PDF: 3791228 bytes, checksum: f8c19a609446fb74d6eea0f1f0990f94 (MD5) Previous issue date: 1975

    uiuc Repository record

  2. Liquid-phase-epitaxial growth and properties of indium gallium phosphide and indium gallium phosphide arsenide injection lasers

    Hitchens, William Robert2012

    Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-22T19:29:54Z No. of bitstreams: 1 1975_hitchens.pdf: 4073212 bytes, checksum: 83d0ce7d426078eaafd0df098ca21fa1 (MD5)

    uiuc Repository record

  3. Preparation and Properties of Indium-Gallium-Phosphide

    Macksey, Harry MichaelUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T22:38:54Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7317307.PDF: 3793534 bytes, checksum: d95be066fbf684ffbf4f92f1ea180865 (MD5) Previous issue date: 1972

    uiuc Repository record

  4. Preparation and Properties of Indium Gallium Phosphide

    Macksey, Harry Michael2012

    Submitted by Jesse Garrison (jagarris@illinois.edu) on 2012-01-09T20:28:13Z No. of bitstreams: 1 1972_macksey.pdf: 4176648 bytes, checksum: 59074b050fda219d0613092bdc527e22 (MD5)

    uiuc Repository record

  5. Visible-Spectrum Indium Gallium Phosphide Arsenide Heterostructure Lasers

    Chin, RaymondUniversity of Illinois at Urbana-Champaign2014

    The growth, fabrication and luminescence characteristics of wide-gap In(,1-x)Ga(,x)P(,1-z)As(,z) double heterojunction lasers and of single and multiple quantum-well lasers are examined.

    uiuc Repository record

  6. Near-Infrared Indium-Gallium Phosphide-Arsenide Double Heterojunction Lasers

    Wright, Phillip DouglasUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:46Z (GMT). No. of bitstreams: 1 7804200.pdf: 3291865 bytes, checksum: ce6e38a15de39527abc38a543f50830f (MD5) Previous issue date: 1977

    uiuc Repository record

  7. High-Performance Indium Gallium Phosphide/gallium Arsenide Heterojunction Bipolar Transistors

    Ahmari, David AbbasUniversity of Illinois at Urbana-Champaign2015

    To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and …

    uiuc Repository record

  8. Indium-Gallium Phosphide-Arsenide - Gallium Arsenide-Phosphide Single Heterojunction Lasers

    Coleman, James JosephUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:13Z (GMT). No. of bitstreams: 1 7606730.pdf: 2847725 bytes, checksum: 538397f02a07c1415ab059d85212392e (MD5) Previous issue date: 1975

    uiuc Repository record

  9. Indium-Gallium Phosphide-Arsenide Double Heterojunction Lasers and Defect Tunneling

    Ludowise, Michael JosephUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:38Z (GMT). No. of bitstreams: 1 7726705.pdf: 3460480 bytes, checksum: 32ba591f66c7d9269700fee65ffaf1ef (MD5) Previous issue date: 1977

    uiuc Repository record

  10. Three -Port Modulation of Indium Gallium Phosphide/gallium Arsenide Transistor Lasers

    Chan, Richard T.University of Illinois at Urbana-Champaign2015

    Further material structure modification leads to the laser operation (quasi-continuous, ∼200 K) of an InGaP/GaAs/InGaAs HBLET with AlGaAs confining layers and an InGaAs recombination QW incorporated in the p-type base region. Furthermore, the microwave operation and modulation (3 GHz) of an …

    uiuc Repository record

  11. Design and fabrication of high-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

    Fresina, Michael ThomasUniversity of Illinois at Urbana-Champaign2011

    Restriction data tranferred 2014-07-01T11:18:09-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission

    uiuc Repository record

  12. Growth and characterization of mismatched indium gallium phosphide films for reduced area dislocation filtering

    Makan, Sanjeev, 1973-Massachusetts Institute of Technology1997

    Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1997.

    mit Repository record

  13. Photoluminescence Studies of the Nitrogen Isoelectronic Trap in Gallium Arsenide-Phosphide and Indium-Gallium Phosphide

    Dupuis, Russell DeanUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-10T19:07:14Z (GMT). No. of bitstreams: 1 7405556.pdf: 2984409 bytes, checksum: 32d7ecff7a8789c4b36121c6c5ee6d00 (MD5) Previous issue date: 1973

    uiuc Repository record

  14. Visible-Spectrum Indium-Gallium - Phosphide - Arsenide Lasers and High-Pressure Measurements on Quantum-Well Heterostructure Lasers

    Kirchoefer, Steven WilliamUniversity of Illinois at Urbana-Champaign2014

    Hydrostatic pressure studies on metalorganic chemical vapor deposition (MO-CVD) grown Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructure (QWH) laser diodes and on AlAs-GaAs and Al(,x)Ga(,1-x)As-GaAs superlattices (SL's) are described. The growth and characterization of visible-light emitting …

    uiuc Repository record

  15. Analysis of and process development for high-frequency indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

    Hanson, Allen WilliamUniversity of Illinois at Urbana-Champaign2011

    The In$\rm\sb{0.5}Ga\sb{0.5}$P/GaAs materials system has been investigated for use in heterojunction bipolar transistor applications. This material possesses several properties which make it attractive as a potential replacement for AlGaAs as the wide band gap emitter material. These properties …

    uiuc Repository record

  16. Liquid Phase Epitaxial Growth and Luminescence Characteristics of Indium Gallium Phosphide Arsenide - Indium Phosphide Quantum-Well Heterostructures

    Rezek, Edward AnthonyUniversity of Illinois at Urbana-Champaign2014

    Since the development of practical semiconductor devices, most work has concentrated on changing the device geometry to suit particular design constraints. However, within the last several years there has been an attempt to build an entirely new class of devices by modifying the electronic str

    uiuc Repository record

  17. Tunneling in the Iii-v Semiconductor Alloys Indium Gallium Phosphide, Gallium Aluminum Arsenide, and Gallium Arsenide Phosphide

    Korb, Harold WilfredUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-10T19:06:52Z (GMT). No. of bitstreams: 1 7212254.pdf: 3159809 bytes, checksum: 3806fd4032e22d4e943204391b117cec (MD5) Previous issue date: 1971

    uiuc Repository record

  18. Luminescence, Absorption, and Pressure Studies of Nitrogen-Doped and Nitrogen-Free Gallium Arsenide-Phosphide and Indium-Gallium-Phosphide

    Nelson, Ronald JarlUniversity of Illinois at Urbana-Champaign1976

    Made available in DSpace on 2015-05-13T15:22:01Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7624149.PDF: 3820930 bytes, checksum: e51ccddc0ba56fa044383103a1aeba74 (MD5) Previous issue date: 1976

    uiuc Repository record

  19. Indium-Gallium - Phosphide-Arsenide Quantum-Well Heterostructure Lasers Grown on Gallium-Arsenide Substrate by Liquid Phase Epitaxy (Miscibility)

    Fuller, Brian KeithUniversity of Illinois at Urbana-Champaign1984

    Light emitting In(,1-x)Ga(,x)P(,1-z)As(,z)-In(,1-x')Ga(,x')P(,1-z')As(,z')quantum-well heterostructure platelet lasers grown on (100) GaAs substrate that are capable of operating continuously at room temperature (cw, 300 K) at a wavelength of 7700 (ANGSTROM), but with a limited operating life, as …

    uiuc Repository record

  20. Properties of the Nitrogen Isoelectronic Trap in the III-V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide

    Scifres, Donald RayUniversity of Illinois at Urbana-Champaign2014

    Submitted by Carly Hafner (chafner2@illinois.edu) on 2014-06-06T16:20:02Z No. of bitstreams: 1 1972_Scifres.pdf: 1983799 bytes, checksum: af0bafc6b6a5f1fddded6b4a13be36ac (MD5)

    uiuc Repository record

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