Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"indium gallium nitride (InGaN)"”.
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Hybrid optoelectronics with colloidal nanocrystals
… nanocrystals (NC) in the vicinity of a single indium gallium nitride InGaN quantum well (QW) in dependence of temperature. QWs of the alloy material InGaN exhibit a dependence of the exciton dimensionality on the thermal energy available. It was demonstrated that this dependence influences the …
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IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale
Gallium nitride (GaN) and indium gallium nitride (InGaN) nanowires promise potential for further improving the electricity-to-light energy conversion efficiencies in light emitting diodes due to strain relaxation, reduced density of structural defects, and easier light extraction. Material quality …
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Remote Epitaxy by In-Situ Grown BN and InGaN Strain Relaxation
… epitaxy process based on MBE in-situ grown boron nitride (BN). Ultrathin (200nm) single-crystalline freestanding gallium nitride (GaN) film is obtained using this technique. A high throughput process is demonstrated to produce multiple freestanding membranes from a single wafer and in a single …
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Toward ultra-broadband photoacoustic spectroscopy of supercooled liquids
… (SLs) composed of alternating layers of gallium arsenide (GaAs) and aluminum arsenide (AlAs) and multiple quantum well structures (MQW) of indium gallium nitride (InGaN) and gallium nitride (GaN) as photoacoustic transducers are presented. The results demonstrate that InGaN/GaN SLs can be …
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High-efficiency ultrasound-powered micro-LEDs for optogenetic applications
Gallium nitride (GaN) light-emitting diodes (LEDs) play the most important role in visible light applications, and more than 87% LEDs are used in indoor/outdoor lighting, automotive lighting, etc. Recent advancements in neuroscience and technology opened a new opportunity for LEDs to be used for …
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Modeling of devices for gallium-nitride-based integrated photonics
… important semiconductor since silicon (Si),"" gallium nitride (GaN) has received a tremendous amount of attention during the past two decades due to its superb material properties. While the wide band gap and high electron saturation velocity make it especially suitable for high-power and …
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Fabrication and transfer assembly of microscale, solid-state light emitting diodes and solar cells for transparent and flexible electronics applications
… where theoretical limits are being approached. Gallium nitride-based light-emitting diodes and silicon solar cells, for example, have achieved such extraordinarily high performance metrics that only incremental improvements upon them are expected in the next decade of intense research. This …