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Showing 1 to 15 of 15 for “"indium gallium nitride"”.
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Absolute internal quantum efficiency of indium-gallium nitride based light-emitting diodes
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-12-01
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Synthesis, characterization, and biotemplated assembly of indium nitride and indium gallium nitride nanoparticles
… average size of 6.2 nm. Based on this synthesis, indium-rich InGaN nanoparticles were synthesized and characterized. Chemical, structural, and optical analysis indicated up to 10% gallium incorporation before encountering the miscibility gap. Using CdSe nanoparticles as a model system, M13 …
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Theoretical study of segregation kinetics of indium in indium gallium nitride and magnesium in magnesium-gallium nitride grown by molecular beam epitaxy
A rate equation model including all physically relevant surface processes is developed for the study of In segregation in InGaN and Mg segregation in Mg-GaN MBE growth. In InGaN growth, the simulations were carried for a variety of growth conditions spanning the growth parameter space: substrate …
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Fabrication and transfer assembly of microscale, solid-state light emitting diodes and solar cells for transparent and flexible electronics applications
… where theoretical limits are being approached. Gallium nitride-based light-emitting diodes and silicon solar cells, for example, have achieved such extraordinarily high performance metrics that only incremental improvements upon them are expected in the next decade of intense research. This …
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Hybrid optoelectronics with colloidal nanocrystals
… nanocrystals (NC) in the vicinity of a single indium gallium nitride InGaN quantum well (QW) in dependence of temperature. QWs of the alloy material InGaN exhibit a dependence of the exciton dimensionality on the thermal energy available. It was demonstrated that this dependence influences the …
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H-BN integration in III-nitride devices for green hydrogen applications
… splitting. The focus is on integrating InGaN (Indium Gallium Nitride), GaN (Gallium Nitride), and h-BN (hexagonal Boron Nitride), which are promising materials for hydrogen production and storage applications thanks to their unique properties. InGaN, for example, offers a tunable band gap, high …
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IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale
Gallium nitride (GaN) and indium gallium nitride (InGaN) nanowires promise potential for further improving the electricity-to-light energy conversion efficiencies in light emitting diodes due to strain relaxation, reduced density of structural defects, and easier light extraction. Material quality …
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Remote Epitaxy by In-Situ Grown BN and InGaN Strain Relaxation
… epitaxy process based on MBE in-situ grown boron nitride (BN). Ultrathin (200nm) single-crystalline freestanding gallium nitride (GaN) film is obtained using this technique. A high throughput process is demonstrated to produce multiple freestanding membranes from a single wafer and in a single …
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Toward ultra-broadband photoacoustic spectroscopy of supercooled liquids
… (SLs) composed of alternating layers of gallium arsenide (GaAs) and aluminum arsenide (AlAs) and multiple quantum well structures (MQW) of indium gallium nitride (InGaN) and gallium nitride (GaN) as photoacoustic transducers are presented. The results demonstrate that InGaN/GaN SLs can be …
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Study of Thin GaN/InGaN/GaN double graded structures for Future photovoltaic application
<p>Indium gallium nitride (In_x Ga_(1-x) N) materials have displayed great potential for photovoltaic and optoelectronic devices due to their optical and electrical properties. Properties such as direct bandgap, strong bandgap absorption, thermal stability and high radiation resistance qualify them …
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High-efficiency ultrasound-powered micro-LEDs for optogenetic applications
Gallium nitride (GaN) light-emitting diodes (LEDs) play the most important role in visible light applications, and more than 87% LEDs are used in indoor/outdoor lighting, automotive lighting, etc. Recent advancements in neuroscience and technology opened a new opportunity for LEDs to be used for …
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Modeling of devices for gallium-nitride-based integrated photonics
… important semiconductor since silicon (Si),"" gallium nitride (GaN) has received a tremendous amount of attention during the past two decades due to its superb material properties. While the wide band gap and high electron saturation velocity make it especially suitable for high-power and …
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Efficiency droop mitigation and quantum efficiency enhancement for nitride Light-Emitting Diodes
In the past decade, GaN-based nitrides have had a considerable impact in solid state lighting and high speed high power devices. InGaN-based LEDs have been widely used for all types of displays in TVs, computers, cell phones, etc. More and more high power LEDs have also been introduced in general …
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Modeling and Simulation of III-Nitride-Based Solar Cells using Nextnano®
… as a viable tool for the simulation of III-nitride solar cells. In order to prove this feasibility, the generally accepted solar cell simulation package, PC1D, was chosen for comparison. To critique the results from both PC1D and Nextnano3, the fundamental drift-diffusion equations were used …
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Desarrollo de técnicas de caracterización para materiales de banda intermedia : Development of characterization techniques for intermediate band materials
… Firstly Titanium doped Silicon (Si:Ti) and Gallium Phosphide (GaP:Ti) materials are considered. Also, Manganese doped Indium Gallium Nitride (InGaN:Mn) is analysed. The obtained results for these doped materials are inconclusive as to whether or not they exhibit an IB nature. The proposed …