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Showing 1 to 20 of 35 for “"indium arsenide"”.
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Ultrafast carrier dynamics and enhanced electroabsorption in (gallium,indium)arsenide/(aluminum,indium)arsenide asymmetric double quantum well structures
An experimental study, utilizing a novel nondegenerate transmission pump/probe technique, of ultrafast electron and hole tunneling in (Ga,In)As/Al,In)As asymmetric double quantum wells (ADQWs) is presented. A single time constant is observed at low carrier densities indicating the holes tunnel from …
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Long-wavelength gallium-indium-arsenide quantum wire lasers
Long-wavelength (1.55 $\mu$m) $\rm Ga\sb{x}In\sb{1-x}As/Al\sb{0.48}In\sb{0.52}As$ multiple quantum wire (MQWR) lasers grown on (100) on-axis InP substrates by a single-step MBE have been successfully fabricated and characterized. The QWRs were formed in situ in the (GaAs)$\sb2$/(InAs)$\sb{2.2}$ …
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Injection locking characteristics of indium arsenide quantum dash lasers
The study of injection locking characteristics was performed on an InAs Quantum Dash (QDash) semiconductor laser for the first time. The linewidth enhancement factor(α-parameter) of a QDash laser was measured using an injection locking technique that takes advantage of the asymmetry of the …
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Indium Phosphide Based Indium Arsenide Quantum Dot Infrared Photodetectors
Based on the developed QD growth techniques, photoconductive InAs/InAlGaAs/InP QDIPs grown on InP by MBE technique were presented. These devices demonstrated responses to normal incident photoexcitations in the 5-18-mum range. The QDIP device based on bound-to-bound transitions shows a peak …
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Antimony-based type-II superlattice infrared photodetectors on indium-arsenide substrates
The wide variety of applications for mid- and far-infrared detection has spurred the study of cutting-edge technologies for use in the next genera- tion of detectors in place of the current systems, such as mercury cadmium telluride. While type-II superlattices over a number of advantages in design …
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Indium arsenide quantum dots for single photons in the communications band
… towards engineering and characterizing epitaxial Indium Arsenide (InAs) quantum dots as single photon sources in the optical communications C-Band (Conventional Band; 1535 nm-1565 nm wavelength). First, the underlying theory of semiconductor quantum dots and the necessary tools from quantum optics …
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Design, modeling, and optimization of indium arsenide diodes for microscale thermophotovoltaics
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2001.
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Development of indium arsenide quantum dot solar cells for high conversion efficiency
Sunlight is the largest energy source available on earth. Under clear conditions there is approximately 1,000 watts per directly incident square meter, which reaches the earth everyday. Solar cells are devices that can be used to collect such abundant form of energy and convert it into electrical …
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Fabrication of Gallium Indium Arsenide Phosphide Quantum Wire Heterostructures for Optoelectronic Applications
Thermal annealing techniques were also applied to QWRs. After this treatment, emissions were found to be at a higher energy than the as-grown samples, attributed to the disordering of the lateral composition modulation which, in effect, raised the bandgap energy of the QWR material. In addition, …
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Temperature -Invariant Photoluminescence and Gain Spectra of Strained Gallium -Indium -Arsenide Quantum Wires
Using the Hakki-Paoli method, gain spectra at 77 and 300 K has been derived for a SILO grown GaInAs QWR Fabry-Perot laser diode. The wavelength-shift rate of the gain spectra is ∼1.4 A/°C. These temperature stabilized gain spectra make the QWRs applicable to long-wavelength VCSELs. The …
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Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recombination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide
Made available in DSpace on 2015-05-12T22:39:00Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7411966.PDF: 3851014 bytes, checksum: cd1a4a475e1514b2d5520a344358ec96 (MD5) Previous issue date: 1973
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Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recomination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide
Submitted by Jesse Garrison (jagarris@illinois.edu) on 2011-11-14T19:00:55Z No. of bitstreams: 1 1973_campbell.pdf: 4175372 bytes, checksum: ed3da0d70330dce9e8d913abbf574623 (MD5)
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Integration of Single -Walled Carbon Nanotubes With Gallium Arsenide(110) and Indium Arsenide(110) Surfaces: A Scanning Tunneling Microscopy Study
In an effort to better elucidate the influence of semiconducting surfaces on supported carbon nanotubes, we have used scanning tunneling microscopy (STM) and spectroscopy (STS) to investigate the physical and electronic behavior of single-walled carbon nanotubes (SWNTs) coupled to GaAs(110) and …
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A Comparative Study of Indium Arsenide/gallium Arsenide Short-Period Superlattice and Alloy Quantum Well Structures on Gallium Arsenide Substrates
A comparison between (InAs)$\sb1$/(GaAs)$\sb1$ short-period-superlattice (SPS) and $\rm In\sb{0.5}Ga\sb{0.5}As$ alloy quantum-well structures grown on GaAs substrates has been made. Structural properties, photoluminescence properties, and thermal stability were investigated. A 1.265-$\mu$n …
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Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications
Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron …
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Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide-Indium Arsenide Quantum Dot Coupled to Quantum Well Heterostructure Lasers by Low-Pressure Metalorganic Chemical Vapor Deposition
Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers [quantum wells (QWs)] within tunneling distance of a single-quantum-dot (QD) layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure laser to realize …
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Theoretical Studies of High Energy Transport of Electrons and Holes in Gallium-Arsenide, Indium-Phosphide, Indium-Arsenide, and Gallium-Antimonide (Semiconductors, Monte Carlo, Impact Ionization)
In this thesis, the high field behavior of both electrons and holes is studied using a Monte Carlo calculation including a complete band structure. The Monte Carlo method is particularly useful since it can be applied to both steady state and transient problems.
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Gas source molecular beam epitaxy of aluminum gallium indium phosphide for visible spectrum light emitting diodes
… controlled compositions in the aluminum gallium indium arsenide and indium phosphide material systems. This work extends this growth technique to the aluminum gallium indium phosphide material system and demonstrates that it is a potentially viable and attractive technique for producing visible …
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Contact-free Electrical Characterisation of Novel Materials Using Terahertz Spectroscopy
… degrades the optoelectronic properties of indium arsenide (InAs), indium arsenide phosphide (InAsP) and tin-based halide perovskites were extensively studied using terahertz spectroscopy. An ultra-thin InP layer with a ∼2- 3 nm thickness and a higher band gap in comparison, has been …
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