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Showing 1 to 1 of 1 for “"indirect gallium arsenide phosphide alloys"”.
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Study of exciton localized by random potential in indirect gallium arsenide phosphide alloys
… Mx/0 in photoluminescence spectra from n-type indirect GaAs P alloys. The intensity of Mx/0 starts l -x x to saturate relative to that of the donor-bound exciton (Do) at very low excitation laser po\vcr. It has a low activation energy (2 meV) and prominant X-point phonon sidebands. Its wave …