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Showing 1 to 1 of 1 for “"in-stu reflectometry"”.
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New process approaches to metalorganic vapor phase epitaxy of III-nitrides for high power HEMTs
As a promising candidate for future microwave power devices, GaN-based high-electron mobility transistors (HEMTs) have attracted much research interest. However, group III-nitride growth related issues – predominantly the high defect densities due to lacking lattice matched substrates – limit the …