Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 17 of 17 for “"implantation damage"”.
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Ion Implantation Damage in Semiconductors
… from defects in ion implanted Si was studied at implantation temperatures ranging from 100 K to 300 K, and the results were compared to simulations of the scattering intensity from realistic defects in Si. In situ studies of keV implants identified close Frenkel pair defects as the primary …
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Ion Implantation Damage in Solids
Ion induced surface smoothing and roughening processes were studied using Molecular Dynamics (MD) computer simulation. The simulations on self-ion bombarded W showed the effect of the surface on defect production and the roughening of the surface. The simulations on the CuTi, Ag and Ni with …
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Transmission electron microscopy investigation of ion implantation damage in gallium arsenide and other semiconductors
… transition induced by ion implantation was investigated in GaAs and GaP using transmission electron microscopy. The experiments included those performed in situ using the HVEM-Tandem Accelerator Facility at Argonne National Laboratory and also those performed using …
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Investigation of implantation damage in aluminum gallium arsenide/gallium arsenide heterostructures using ion channeling and transmission electron microscopy
The implantation damage behavior of GaAs/Al$\sb{0.6}$Ga$\sb{0.4}$As multilayer structures has been investigated by implanting samples with 1 MeV Kr$\sp+$, 1.5 MeV Kr$\sp+$, 1 MeV Ar$\sp+$, and 1.5 MeV Kr$\sp{++}$ at 77 K. The resulting damage state was analyzed using low-, room-, and …
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New Forms of Defect Engineering in Silicon and Metal Oxide Semiconductors
… suffer from problems with solid consumption, implantation damage, or foreign atom incorporation. My laboratory has recently discovered two entirely new methods for controlling defect concentration and diffusion in silicon, based on separate mechanisms involving surface chemistry and optical …
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Silicon-Germanium interdiffusion and its impacts on enhanced mobility MOSFETs
… demonstrates that Si-Ge interdiffusion and ion implantation damage during the fabrication of strained Si MOSFETs have significant impact on electron mobility and thus device performance. Long channel n-MOSFETs with different thermal processing and implant conditions were fabricated on both CZ Si …
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Hydrogen evolution and transport in semiconductors
… to establish the influence of lattice damage and hydrogen evolution. In particular, hydrogen-induced blistering and crater formation under thermal annealing from T=300-650 degrees Celsius was studied to determine the activation energies in Ge and Si in several crystalline orientations. …
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Hydrogen evolution and transport in semiconductors
… to establish the influence of lattice damage and hydrogen evolution. In particular, hydrogen-induced blistering and crater formation under thermal annealing from T=300-650 degrees Celsius was studied to determine the activation energies in Ge and Si in several crystalline orientations. …
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Ion-beam processes in group-III nitrides
… tool. However, a successful application of ion implantation depends on an understanding of the effects of radiation damage. Hence, this thesis explores a number of fundamental aspects of radiation effects in wurtzite III-nitrides. Emphasis is given to an understanding of (i) the evolution of …
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Ion-beam processes in group-III nitrides
… tool. However, a successful application of ion implantation depends on an understanding of the effects of radiation damage. Hence, this thesis explores a number of fundamental aspects of radiation effects in wurtzite III-nitrides. Emphasis is given to an understanding of (i) the evolution of …
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Nitride semiconductors studied by atom probe tomography and correlative techniques
… Electron beam irradiation in the TEM caused damage to the InGaN, however, and a statistically significant deviation from a random alloy distribution was then observed by APT. The alloy homogeneity of InAlN was also studied, and this alloy system provided a unique opportunity to study gallium …
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Deuterium Retention and Trapping in Polycrystalline Tungsten under Simultaneous Implantation of Deuterium with Helium and with Neon
… clusters or dislocation loops) than in PCW. Post-implantation damage caused by NRA and ERDA probe ion beams resulted in an additional high temperature TDS peak, associated with retrapping of D at ~1.8-2.1 eV vacancy clusters and dislocation loops. Modelling also suggested that the mechanism for He …
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Point defect engineering in germanium
… during the solid phase epitaxy, and the implantation damage is key in obtaining a high performance material
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Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques
… Conventional dry etching-induced surface damage is one of the main sources of performance degradation for multigate transistors, especially for III-V high mobility materials. It is also challenging to increase the fin aspect ratio by dry etching because of the non-ideal anisotropic etching …
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Titania Nanowires: synthesis, characterization and properties.
… the samples applying two approach: doping by ion implantation of Fe+ and annealing in forming gas. It was found that the formation of pure Ti NWs is not energetically or kinetically favoured in the full range of explored temperatures (600-1000 °C). According to this observation the Au-Ti phase …
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Swift heavy-ion irradiation of amorphous silicon dioxide, silicon nitride and silicon oxynitrides composite systems: from ion tracks to nanoparticle shaping
… analysis shows a region of high radiation damage region within the ion track core for a-SiO2 and a-Si3N4. (ii) To study the synthesis of metallic NPs, a-SiO2 and a-Si3N4 were implanted with 2 MeV Au ions at a fluence of 5 x 10^16 cm^-2. The synthesis and growth was promoted by thermal …
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Swift heavy-ion irradiation of amorphous silicon dioxide, silicon nitride and silicon oxynitrides composite systems: from ion tracks to nanoparticle shaping
… analysis shows a region of high radiation damage region within the ion track core for a-SiO2 and a-Si3N4. (ii) To study the synthesis of metallic NPs, a-SiO2 and a-Si3N4 were implanted with 2 MeV Au ions at a fluence of 5 x 10^16 cm^-2. The synthesis and growth was promoted by thermal …