Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 23 for “"ideality factor"”.
-
Design, Fabrication and Characterization of a GaAs/InxGa1-xAs/GaAs Heterojunction Bipolar Transistor
… mismatch between InAs and GaAs, the diode has an ideality factor of 1.26 over three decades in the forward direction. In the reverse direction, the leakage current grows exponentially with the magnitude of the bias, and shows an effective ideality factor of 3.17, in stark disagreement with …
-
Electrical analysis of low energy argon ion bombarded GaAs
… 4 orders of magnitude from the virgin case. The ideality factor, n, increased slightly while the breakdown voltage decreased. The most prominent changes occurred in the DLTS spectrum where it was observed that the native arsenic defect EL2 peak disappeared completely after ion etching. …
-
Design of CMOS Four-Quadrant Gilbert Cell Multiplier Circuits in Weak and Moderate Inversion
… and to address higher order effects such as ideality factor mismatch, threshold mismatch, body effect, and short channel effects, is important to provide a linear multiplier. It is also shown that distortion caused by device size mismatch and offset input currents can be used to cancel the …
-
Effects of ion irradiation on 4H- SiC p-n junction
… irradiation fluence produces an increase in both ideality factor and saturation current mainly due to the increase of point defects concentration. The former parameter evidences that the recombination mechanism dominates the current flow; instead, the second parameter is inversely proportional to …
-
Spintronic and plasmonic applications of electrodeposition on semiconductors
… Schottky barriers indicate that they have an ideality factor close to unity and that the reverse bias leakage is orders of magnitude smaller than in evaporated Schottky barriers. These characteristics can be used to make highly doped Schottky barriers in which all reverse bias current is due …
-
Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy
… and the 106 of rectification ratio and 2.18 of ideality factor were measured. The forward-biased current scales with the number of contacted NWs. Finally, the doping concentration modulation capability on SLE grown planar p-n NWs were verified.
-
Electronic properties and microstructure of nanoparticulate silicon systems for diode applications
… for reverse bias voltages up to 5V with an ideality factor of 10.6, and rectification ratios of approximately 10⁴ were observed.
-
Pico-grid: Multiple Multitype Energy Harvesting System
… of extracting important parameters such as ideality factor, barrier height, and series resistance of the diode based on a curve fitting method is proposed. It is determined that the ideality factor of the fabricated diode is high (> 2 at RT), due to the existence of other transport mechanism …
-
Development of electrical and optical devices for next generation high-speed optical interconnects
… surface recombination, but with trade-offs in ideality factor, yield, base resistance, and fT/fmax. Together, these results provide the process capability and device understanding needed to co-optimize Cryo-VCSEL sources and InP-DHBT electronics for fJ/bit-class, long-reach optical …
-
Development of indium arsenide quantum dot solar cells for high conversion efficiency
… The 2x2mm solar cell exhibits improvement in the ideality factor, shunt resistance, and saturation current. Some future work suggestions are given to increase the InAs QD solar cells such as multilayer structures with embedded InAs QD using different processing techniques.
-
Band anti-crossing modelling and characterization of multi quantum well gainnas for photovoltaic application
… area was found increment in the dark current and ideality factor, while the value of short-circuit current density and efficiency parameters (photovoltaic) were decreased likewise. However, the value of turn on voltage, barrier height, open-circuit voltage and fill factor have constantly recorded …
-
Characterisation of radiation effects in ultra-thin GaAs solar cells for space applications
… tunneling also partially explains the high ideality factors (> 2) of ultra-thin solar cells. The observed variation in ideality factor with radiation type is correlated with corresponding trends in open-circuit voltage degradation rate, carrier lifetime damage constants and appearance of …
-
Synthesis and characterization of TiO2 nanotube Schottky diodes
… TiO2 diodes displayed an improved ideality factor from 3.7 to 2.4. A 350 [degrees] C post-fabrication thermal treatment, however, led to both stoichiometric and nonstoichiometric TiO2 diodes having similar ideality factors of 2.0 and similar shifts in trap concentration and depth. …
-
GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications
… and extraction of their main parameters such as ideality factor, barrier height and series resistance. A thorough investigation of their reverse recovery performance and a comparison to competing technologies is also given. Several topics which concern the operation of AlGaN/GaN HEMTs are then …
-
Electrical studies on new generations of oxide cathodes for CRT applications.
… ratio (r) of 100. The calculated value of ideality factor indicated n = 9.6, which is evidence of tunnelling conduction.
-
Growth and Characterization of (InxGa1-x)2O3, and NiO Heterostructures
… of 1.54 and 2.38 eV, respectively. Finally, good ideality factor (~ 2.0) and breakdown voltages of the test devices of NiO/ β-(InxGa1-x)2O3 p-n diode of 9 - 16 V suggested dominant recombination process for forward bias conduction and demonstrated better performance than NiO/β-Ga2O3, consequently …
-
Metal-aluminium gallium nitride Schottky contacts formation.
… yield a Schottky barrier height of 0.82 eV with ideality factor n = 1.21.XPS and I-V results on Ag/Al[x]Ga[1]-[x]N and Ni/Al[x]Ga[1]-[x]N are compared and discussed in terms of current models of Schottky barrier formation.
-
CdTe Solar Cells: Key Layers and Electrical Effects
… reduced the number of the required samples by a factor of ~ 30. This was achieved by varying the CdTe thickness by chemically bevelling the cells in a Br2/methanol solution. The best performance was obtained at a CdTe thickness of ~ 3 μm, for which the CdCl2 treatment used was optimum. Both the …
-
Synthesis and characterization of nanocrystalline CuCl hybrid films for electroluminescent device fabrication.
… behaviour with the values of barrier height and ideality factor equal to 0.72 eV and 4.6, respectively. This structure could be useful for photovoltaic cell fabrication, particularly for the blue/UV spectral regions.
-
Spectroscopic and Electrical Characterization of SiO<sub>x</sub> and GaN Device Structures as a Function of Irradiation
… sheet resistance, contact resistance, and ideality factor. However, the common GaN defects and Ev + 1.4 eV densities were lower than in the fast-only neutron case. These results suggested that thermal neutrons affected the metal contacts more than the GaN. Optical images, x-ray …
Page 1 of 2