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Showing 1 to 20 of 204 for “"hydrogenated"”.

  1. Density of gap states in hydrogenated amorphous silicon

    <p>Amorphous silicon hydride films have been grown by an improved r.f. sputtering method in a hydrogen-argon atmosphere. Deposition parameters such as substrate temperature, gas flow rate, r.f. power, and argon partial pressure were kept constant, while hydrogen partial pressure was varied. The …

    iastate Repository record for Density of gap states in hydrogenated amorphous silicon (opens in a new tab)

  2. Physical characteristics of laser processed hydrogenated amorphous silicon

    Hydrogenated amorphous silicon films subjected to KrF excimer laser irradiation with a profiled beam in air leads to the formation of microstructures. The main objective of this research was to perform a comprehensive study in understanding this material in three different aspects: thermal, …

    dundee Repository record for Physical characteristics of laser processed hydrogenated amorphous silicon (opens in a new tab)

  3. Extent of digestion of hydrogenated fats by ruminants

    … 68, 50, and 64% for control, prilled FA, prilled hydrogenated tallow (HT), and flaked FA; Experiment 2: 77, 64, 63, and 62% for control, 2, 4, and 6% partially HT; Experiment 3: 81, 78, 70, 67, and 69% for control, calcium-salts of long-chain FA, prilled FA, and prilled and flaked hydrogenated

    uiuc Repository record for Extent of digestion of hydrogenated fats by ruminants (opens in a new tab)

  4. Surface Structure and Growth Mechanisms of Hydrogenated Amorphous Silicon

    Made available in DSpace on 2015-09-25T20:03:31Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9921704.pdf: 3532216 bytes, checksum: d6159bd04f372d8389e2b6d995b4b7fe (MD5) Previous issue date: 1999

    uiuc Repository record for Surface Structure and Growth Mechanisms of Hydrogenated Amorphous Silicon (opens in a new tab)

  5. Light induced degradation in hydrogenated amorphous silicon (a-Si:H)

    … and optical properties of a series of hydrogenated amorphous silicon (a-Si:H) layers, deposited by hot wire chemical vapour deposition system (HWCVD) on glass and silicon substrates at different temperatures ranging from 250Light induced degradation in the microstructure and optical …

    cape-town Repository record for Light induced degradation in hydrogenated amorphous silicon (a-Si:H) (opens in a new tab)

  6. Understanding and improving hole transport in hydrogenated amorphous silicon photovoltaics

    While hydrogenated amorphous silicon (a-Si:H) solar cells have been studied extensively for the previous four decades, the low performance of the devices is still not well understood. The poor efficiency (below 10%, even in research-scale devices) is believed to be mainly due to the low hole …

    mit Repository record for Understanding and improving hole transport in hydrogenated amorphous silicon photovoltaics (opens in a new tab)

  7. Nutritional and Metabolic Consequences of Partially Hydrogenated Fat in the Rat

    Made available in DSpace on 2014-12-10T22:38:15Z (GMT). No. of bitstreams: 1 7114736.pdf: 5186656 bytes, checksum: 4670b828bcac96461d59051c1634e494 (MD5) Previous issue date: 1970

    uiuc Repository record for Nutritional and Metabolic Consequences of Partially Hydrogenated Fat in the Rat (opens in a new tab)

  8. Carrier mobility of downscaled amorphous semiconductors exemplified by hydrogenated amorphous silicon

    … which affects charge transport. Using hydrogenated amorphous silicon (a-Si:H) as an example, excess valence band and conduction band electrons stemming from the distortion of bonds are modelled according to a Gaussian probability distribution with spatial correlations associated with …

    cambridge Repository record for Carrier mobility of downscaled amorphous semiconductors exemplified by hydrogenated amorphous silicon (opens in a new tab)

  9. Microstructure and residual stress in hydrogenated amorphous silicon (a-Si:H) layers

    Hydrogenated amorphous silicon (a-Si:H) is known to be highly disordered. The disorder introduces a high amount of defects in the network, such as bond length and angle deviation, non-coordinated bonds or voids. In this work the microstructural characterization and a new approach for strain …

    cape-town Repository record for Microstructure and residual stress in hydrogenated amorphous silicon (a-Si:H) layers (opens in a new tab)

  10. Amorphous hydrogenated boron carbide for solid-state direct-conversion thermal neutron detection

    Amorphous hydrogenated boron carbide (a-BC:H) is one of a very limited number of neutron-sensitive materials. It has been studied over the last three decades for solid-state thermal neutron detection due to its high resistivity, moderate bandgap, high neutron absorption cross-section, and high …

    umkc Repository record for Amorphous hydrogenated boron carbide for solid-state direct-conversion thermal neutron detection (opens in a new tab)

  11. Kinetic Roughening During Hot-Wire Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

    Despite the widespread use of hydrogenated amorphous silicon (a-Si:H), the fundamental surface processes during film growth are not well understood. One approach to studying these mechanisms is to analyze the surface morphology that results from their action. In this dissertation, hot-wire chemical …

    uiuc Repository record for Kinetic Roughening During Hot-Wire Chemical Vapor Deposition of Hydrogenated Amorphous Silicon (opens in a new tab)

  12. Analysis of phase transformations in hydrogenated titanium metals by non-isothermal dilatometry

    Hydrogen was used as a temporary alloying element in CP Ti and Ti-6AI-4V. The microstructural evolution and phase transformations were monitored, before, during and after hydrogenation with in-situ dilatometric testing. Wrought CP Ti and Ti-6AI-4V specimens were pre-annealed and experienced four …

    cape-town Repository record for Analysis of phase transformations in hydrogenated titanium metals by non-isothermal dilatometry (opens in a new tab)

  13. Origins and implications of intrinsic stress in hydrogenated amorphous silicon thin films

    Despite decades of research on hydrogenated amorphous silicon (a-Si:H), there remains much to be understood about the relationship between deposition conditions and the resulting structural, optical, and bulk properties of the material. In this work we investigate these correlations for a-Si:H …

    mit Repository record for Origins and implications of intrinsic stress in hydrogenated amorphous silicon thin films (opens in a new tab)

  14. The Bulk and Interfacial Electronic and Chemical Structure of Amorphous Hydrogenated Boron Carbide

    … to the surface, interface and bulk of amorphous hydrogenated boron carbide (a-BxC:Hy), is of interest in neutron detection and microelectronics. This dissertation investigates the chemical and electronic structure of semiconducting thin-film a-BxC:Hy grown by plasma enhanced chemical vapor …

    umkc Repository record for The Bulk and Interfacial Electronic and Chemical Structure of Amorphous Hydrogenated Boron Carbide (opens in a new tab)

  15. Plasma-enhanced chemical vapor deposition of hydrogenated silicon carbide films from novel precursors

    Made available in DSpace on 2011-05-07T12:36:59Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9210972.pdf: 12369824 bytes, checksum: fd525d929ff7e6afc7ee9c5de5cd2d57 (MD5) Previous issue date: 1991

    uiuc Repository record for Plasma-enhanced chemical vapor deposition of hydrogenated silicon carbide films from novel precursors (opens in a new tab)

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