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Showing 1 to 5 of 5 for “"hot electron effects"”.

  1. Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices

    … tunneling and ballistic transport and various hot electron effects discussed within, have been moved from the status of academic curiosity to physically realizable, useful effects.

    uiuc Repository record for Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices (opens in a new tab)

  2. Polaron transport in ionic crystals

    … for making measurements on highly insulating photoconductors. This technique features ease of data reduction, relative freedom from space charge polarization, and higher sensitivity and stability than that of previous designs. Using the new method, measurements were made of Hall effect, hot

    uiuc Repository record for Polaron transport in ionic crystals (opens in a new tab)

  3. Effects of hot electrons on the stability of a closed field line plasma

    Motivated by the electron cyclotron heating being employed on dipole experiments, the effects of a hot species on stability in closed magnetic field line geometry are investigated. The interchange stability of a plasma consisting of a fluid background with a population of kinetic hot electrons is …

    mit Repository record for Effects of hot electrons on the stability of a closed field line plasma (opens in a new tab)

  4. Electrical degradation mechanisms of RF power GaAs PHEMTs

    GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability is of serious concern. Previous studies have identified several distinct …

    mit Repository record for Electrical degradation mechanisms of RF power GaAs PHEMTs (opens in a new tab)

  5. Design and development of radiation-resistant and low-noise semiconductor transistors for applications in high frequency communication systems

    … suggested for adequate analysis of the transport effects. The observed current saturation through a TLM structure confirms that both thermal overheating and hot electron effects are influencing the current. A theoretical model has been developed for the separate investigation of both relevant …

    aachen Repository record for Design and development of radiation-resistant and low-noise semiconductor transistors for applications in high frequency communication systems (opens in a new tab)