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Showing 1 to 2 of 2 for “"high-temperature encapsulation materials"”.

  1. Electro-Thermal Device-Package Co-Design for a High-Temperature Ultra-Wide-Bandgap Gallium-Oxide Power Module

    … that can operate in environments with ambient temperatures exceeding 250 °C are needed for innovation in automotive, aerospace, and down-hole applications. With the imminent mass electrification of transportation and industry, the high-temperature electronics market value is anticipated to grow …

    vt Repository record for Electro-Thermal Device-Package Co-Design for a High-Temperature Ultra-Wide-Bandgap Gallium-Oxide Power Module (opens in a new tab)

  2. Packaging of Enhancement-Mode Gallium Nitride High-Electron-Mobility Transistors for High Power Density Applications

    Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are favored for their smaller specific on-resistance, lower switching losses, and higher theoretical temperature limits as compared to traditional silicon (Si) power switches. They have the potential to dramatically increase the power …

    vt Repository record for Packaging of Enhancement-Mode Gallium Nitride High-Electron-Mobility Transistors for High Power Density Applications (opens in a new tab)