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Showing 1 to 2 of 2 for “"high-resolution cross section"”.
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Electrical contacts on two-dimensional transition metal dichalcogenide semiconductors
… for ultra-thin FETs. However, unusually high contact resistance and Fermi level pinning have been observed due to damage at the metal-2D TMD interface. Studies have shown that van der Waals (vdW) contacts formed by dry transfer of graphene and metals can avoid damage to atomically thin …