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Showing 1 to 1 of 1 for “"high-k dielectrics, SiGe, MOSFETs, surface treatment, laser anneal"”.
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High-K MOSFETS with high mobility channels
… The first part investigates the integration of high-?? gate dielectrics HfO2 and HfAlO on high hole mobility compressive strained-SiGe (I?-SiGe) surface channel for pMOSFET. A high-??/I?-SiGe interfacial layer contains GeOx if the dielectrics are deposited on I?-SiGe directly, whereas the …