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Showing 1 to 7 of 7 for “"high-k Material"”.

  1. A study of three transition metal compounds and their applications

    … with the charge-ordered (CO) insulator phase. High Pr doping will favor the CO order, leading a sharp FM to CO dominated phase transition around Pr concentration of 0.3 and above. Hydrostatic pressure favors FM metallic order without damaging the sample and can be tuned continuously. In this …

    njit Repository record for A study of three transition metal compounds and their applications (opens in a new tab)

  2. Compact Leaky Wave Antenna Using Ferroelectric Materials

    … in this thesis is focused on implementation of material (like PZT) with high dielectric constant (k) in a rectangular waveguide leaky wave antenna. Due to the high dielectric constant of PZT ~ 1,900, the propagation wavelength in the waveguide can be dramatically shortened. This allows the leaky …

    ohiolink Repository record for Compact Leaky Wave Antenna Using Ferroelectric Materials (opens in a new tab)

  3. Alternative gate dielectrics and application in nanocrystal memory

    … (Ge) nanocrystal memory structures, employing high dielectric constant (high-k) materials to replace the tunnel oxide and capping oxide (control oxide) layers, was investigated. It was found that faster charging rate and better charge retention performance could be obtained with a high-k tunnel …

    nus Repository record for Alternative gate dielectrics and application in nanocrystal memory (opens in a new tab)

  4. Protein-mediated nanocrystal assembly for floating gate flash memory fabrication

    … for novel device concept, architecture and new materials has never been so pressing as today. Flash memories, the driving force of semiconductor memory market in recent years, also face the same or maybe more severe challenges to meet the demands for high-density, low-cost, low-power, …

    texas Repository record for Protein-mediated nanocrystal assembly for floating gate flash memory fabrication (opens in a new tab)

  5. Application of novel gate materials for performance improvement in flash memory devices

    … objective of this work is to apply novel gate materials for the performance enhancement of flash memory devices, including both floating gate-type flash memory devices and SONOS-type flash memory devices. These attempts could be of practical value for flash memory devices, especially in …

    nus Repository record for Application of novel gate materials for performance improvement in flash memory devices (opens in a new tab)

  6. Design and optimization of ultrathin silicon field effect transistor's for sensitive, electronic-based detection of biological analytes

    … structure, require the use of no labels, and are highly sensitive to the binding of molecules to their surfaces. This is due to the large surface area to volume ratio afforded to nanowires. Moreover, arrays of silicon nanowires have demonstrated multiplexed, label-free sensing of cancer markers …

    uiuc Repository record for Design and optimization of ultrathin silicon field effect transistor's for sensitive, electronic-based detection of biological analytes (opens in a new tab)

  7. Hochauflösende Rutherford-Streuspektrometrie zur Untersuchung von ZrO2-Schichtwachstum im Anfangsstadium

    Die vorliegende Arbeit entstand im Rahmen einer Kooperation des Forschungszentrums Dresden-Rossendorf mit Qimonda Dresden GmbH & Co. OHG. Mithilfe der hochauflösenden Rutherford-Streuspektrometrie (HR-RBS) wurden das Diffusionsverhalten und Schichtwachstum von ZrO2 auf SiO2 und TiN im …

    qucosa-diss