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Showing 1 to 7 of 7 for “"high-field transport"”.
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Impact ionization and high-field transport in semiconductors
Aspects of high field transport related to hot electron reliability effects are investigated--with special emphasis, the phenomenon of impact ionization. Both the ionization rate itself and its effect on bulk semiconductor transport are computed by a full-band Monte Carlo algorithm for Si and …
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Dilute nitride semiconductors : band structure, scattering and high field transport
… gap, as seen in experiment. We then examine the high field transport of carriers by solving the steadystate Boltzmann transport equation and find that it is necessary to include the full distribution of N levels in order to account for the small, low-field mobility and the absence of a negative …
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High-field transport in two-dimensional graphene and molybdenum disulfide
… in integrated-circuit technology. Understanding high-field transport in a semiconductor material is crucial not only from the perspective of fundamental device physics, but also for achieving practical device applications. Unfortunately, many of the early measurements on these materials, …
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Substrate-dependent high-field transport and self-heating in graphene transistors
… for nanoelectronic applications due to its high and symmetrical carrier mobility, and high drift velocity compared to silicon. However, when graphene is placed on insulating substrates such as SiO2 or flexible plastics, its inherent superior qualities get suppressed by the influence of the …
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An Experimental Study of Impact Ionization in Compound Semiconductors
… important parameters for the understanding of high field transport in semiconductors. Previous experimental data on impact ionization coefficients have indicated that the bandstructure can have a strong influence on the impact ionization process. In this thesis, the effects of crystallographic …
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Theoretical Studies of High Field, High Energy Transport in Gallium-Arsenide, Silicon and Heterostructures
The study of high field transport has been instrumental to the theory of many semiconductor devices based on, e.g., the Hilsum-Ridley-Watkins mechanism, impact ionization phenomena, and recently real space transfer. It will become even more important as device sizes approach submicron dimensions. …
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Electrical and thermal transport in 2D materials: role of environment and imperfections
… the factors limiting the electrical and thermal transport in 2D materials such as graphene and MoS2. First we investigate the influence of grain boundaries (GBs), line defects (LDs), and chirality on thermal transport in graphene using the nonequilibrium Green’s functions method. At room …