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Showing 1 to 20 of 23 for “"high-energy electron diffraction"”.

  1. Geometric and electronic structure of reconstructed semiconductor surfaces

    Carlisle, John ArthurUniversity of Illinois at Urbana-Champaign2011

    The combination of high-resolution photoemission spectroscopy (PES) using synchrotron radiation, and reflection high-energy electron diffraction (RHEED), along with other techniques, have been used to examine the atomic-scale geometric and electronic properties of clean and adsorbate-covered …

    uiuc Repository record

  2. Low-temperature molecular beam epitaxy of gallium arsenide Antisite incorporation and Rheed oscillations: A theoretical study

    Krishnan, Natarajan

    … arsenic and the temporal variation of reflection high energy electron diffraction (RHEED) intensity in the low temperature (LT) molecular beam epitaxy (MBE) of (100) gallium arsenide (GaAs). A comprehensive rate equation model is proposed based on the presence and dynamics of a physisorbed arsenic …

    unlv Repository record

  3. Magnetic and critical behavior of thin terbium(0001)/tungsten(110) films studied by electron capture spectroscopy (ECS)

    Jin, ChangmingRice University1988

    … substrates are prepared and their geometric, electronic and magnetic properties are studied. The atomic flatness and cleanness and the single-crystalline state of the W(110) substrates and the Tb films are checked using scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and …

    rice Repository record

  4. EPITAXIAL GROWTH AND REAL-TIME ELECTRON DIFFRACTION ANALYSIS OF ADVANCED III-V SEMICONDUCTOR-BASED QUANTUM DOTS

    Gunasekera, Manori Vajira Chintha 1981-University of Houston2015

    … properties significantly affects optical and electronic performances of self-assembled Stranski-Krastanov (SK) quantum dots. Here and within the framework of the synthesis of archetype InAs/GaAs quantum dot system we have undertaken a systematic study on the evolution of dot facet orientation …

    houston Repository record

  5. Growth of Single Crystal, Metastable Ge(1-X)sn(x) Alloys and Ge(1-X)sn(x)/ge Strained-Layer Superlattices on Ge(001)2 X 1 by Molecular Beam Epitaxy

    Gurdal, OsmanUniversity of Illinois at Urbana-Champaign2015

    … T\sb{s}\leq140\sp\circ$C. In-situ reflection high energy electron diffraction combined with post-deposition high-resolution x-ray diffraction (HR-XRD) and XTEM results showed that the $\rm Ge\sb{1-x}Sn\sb{x}(001)2x1$ alloy and Ge(001)2x1 spacer layers were commensurate. In fact, the alloy …

    uiuc Repository record

  6. Geometric and electronic structure of reconstructed semiconductor surfaces;high-resolution photoemission spectroscopy (PES)

    Carlisle, John Arthur2011

    The combination of high-resolution photoemission spectroscopy (PES) using synchrotron radiation and reflection high-energy electron diffraction (RHEED), along with other techniques, have been used to examine the atomic-scale geometric and electronic properties of clean and adsorbate-covered …

    uiuc Repository record

  7. Structural Characterization of Thin Films of Molecules on Solid Surfaces: Development of a Portable UHV Chamber to Bridge RHEED and SFG Spectroscopy Techniques

    Vali, HamedUniversity of Houston2021

    … taking advantage of the strengths of reflection high-energy electron diffraction (RHEED) and sum-frequency generation (SFG) spectroscopy techniques, which include thin films of ionic liquids (ILs) deposited by physical vapor deposition and self-assembled monolayers on gold. A thickness-dependent …

    houston Repository record

  8. An investigation into controlling the growth modes of ferroelectric thin films using pulsed laser deposition and RHEED

    McMitchell, Sean Robert CraigUniversity of Birmingham2008

    … devices, particularly in conjunction with high temperature superconductors. It has no spontaneous polarisation yet possesses a large permittivity at low temperatures that is sensitive to an electric field bias with relatively low loss. For such applications it is essential to use a low loss …

    birmingham Repository record

  9. III-nitride Semiconductors Grown By Plasma Assisted Molecular Beam Epitaxy

    He, Lei2014

    … and military applications due to their optoelectronic and mechanical properties. They have been synthesized successfully by many growth methods. Among them, molecular beam epitaxy (MBE) is a promising epitaxial growth method owing to precise control of growth parameters, which significantly …

    vcu Repository record

  10. Growth and Behaviors of InN/GaN Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy

    Li, Chen2021

    … the potential of InGaN semiconductors requires high quality materials with arbitrary In-content. To this date the growth of In-rich InGaN films is still challenging since it suffers from the low growth temperatures and many detrimental alloying problems. InN/GaN multiple quantum wells (MQWs) and …

    arkansas Repository record

  11. Photoemission spectroscopy of germanium surfaces, interfaces, and germanium-silicon systems

    Miller, Thomas Joseph2011

    High-energy electron diffraction and photoemission techniques providing controlled surface sensitivity were used to study several germanium surface and interface systems: the clean Ge(100)-(2xl) surface, the Ge(100)-Ag interface, and silicon-germanium systems. For the clean Ge(100)-(2xl) surface, …

    uiuc Repository record

  12. Angle-resolved photoemission studies of thin-film topological materials

    Xu, CaizhiUniversity of Illinois at Urbana-Champaign2018

    This dissertation examines the electronic properties of topological materials in their thin film forms, including a prototypical topological insulator (TI), Bi2Te3, and a newly discovered topological Dirac semimetal (TDS), α-Sn under suitable strain. TIs and TDSs have nontrivial surface states and …

    uiuc Repository record

  13. The Structure and Composition of Metal Surfaces

    Levitt, Jonathan Peter FletcherUniversity of Cambridge1979

    Transmission electron microscopy (TEM) has become a valuable tool in the study of the structure and composition of metal surfaces, though its surface-sensitivity is known to be lower than that for reflection high energy electron diffraction (RHEED), low energy electron diffraction (LEED) and Auger …

    cambridge Repository record

  14. Excitation-Induced Ge Quantum Dot Growth on Si(100)-2X1 by Pulsed Laser Deposition

    Er, Ali Oguz2019

    … deposition (PLD). <em>In situ </em>reflection-high energy electron diffraction (RHEED) and post-deposition atomic force microscopy (AFM) are used to study the growth dynamics and morphology of the QDs. A Q-switched Nd:YAG laser (λ = 1064 nm, 40 ns pulse width, 5 J/cm<sup>2</sup> fluence, and 10 …

    odu Repository record

  15. Core-Level Photoemission Investigations of the Cadmium-Telluride(100) and Indium-Antimony(100) Surface and Interfacial Structures

    John, Peter JamesUniversity of Illinois at Urbana-Champaign2015

    … system, and the InSb(100)-Sn interface. High-energy electron diffraction was also employed to acquire information about of surface structure. A one-domain (2x1) structure was observed for the CdTe(100) surface. Analysis of photoemission spectra of the Cd 4d core level for this surface …

    uiuc Repository record

  16. Core-level photoemission investigations of the CDTE(100) and INSB(100) surface and interfacial structures

    John, Peter James2012

    … system, and the InSb(lOO)-Sn interface. High-energy electron diffraction was also employed to acquire information about of surface structure. A one-domain (2xl) structure was observed for the CdTe(lOO) surface. Analysis of photoemission spectra of the Cd 4d core level for this surface …

    uiuc Repository record

  17. Photoemission studies of noble metal semiconductor systems

    Wachs, Alan Leonard2011

    The study of the structural and electronic properties of semiconductor surfaces and of thin metallic films deposited upon them is a topic of fundamental and practical interest. Clean and Au and Ag covered surfaces of Ge(lll)-c(Zx8), Si(lll)-(7x7), Ge(lOO)-(Zxl), and Si(lOO)-(Zxl) are studied in …

    uiuc Repository record

  18. Niobium-tantalum superlattices grown by beam epitaxy: Structure, transport and superconducting properties

    Durbin, Stephen Martin2011

    Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-09T19:51:05Z No. of bitstreams: 1 1983_durbin.pdf: 5624003 bytes, checksum: f4a556b84b6d6143e82beb6d5b0669dc (MD5)

    uiuc Repository record

  19. In Situ Surface Studies of III-V Semiconductor Compounds

    Bastiman, FaebianUniversity of Sheffield2010

    … response for samples including Reflection High Energy Electron Diffraction (RHEED), thermocouples and thermography, yielding a reliable heating profile. Tunnelling tip fabrication involves manufacturing an atomically sharp tip via a two-step electrochemical etching and annealing procedure. …

    whiterose Repository record

  20. Angle-resolved photoemission and first-principles studies of topological thin films

    Bian, GuangUniversity of Illinois at Urbana-Champaign2013

    Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. The exotic electronic properties of topological materials are of great interest for spin-related electronics and quantum computation. …

    uiuc Repository record

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