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Showing 1 to 20 of 27 for “"high-K dielectric"”.
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The Degradation and Time-dependent Breakdown of P-type Mosfets with a High-k Dielectric
In this study, the degradation and eventual breakdown of the gate stack due to trap generation in p-type metal-oxide-semiconductor devices comprised of SiO2/HfO2/TiN was investigated. Negative bias constant voltage stress was applied in conjunction with charge pumping, stress induced leakage …
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A study of high-K dielectric materials in conjunction with a multilayer thick-film system
A new family of dielectric materials has been studied, individually as thick-film capacitors and as buried components incorporated in second-order lowpass and bandpass RC active filter circuits. The materials were electrically characterized in terms of the variation of dielectric constant and …
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Surface and interface characterisation of high-k dielectric materials on silicon and III-V semiconductor substrates
Interface formation between high-k dielectric oxide materials and semiconductor surfaces is of critical importance to the development of the next generation of high speed semiconductor devices. This thesis investigates the deposition and characterisation of a range of candidate high-k materials on …
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Reliability study of Zr and Al incorporated hf based high-k dielectric deposited by advanced processing
Hafnium-based high-x dielectric materials have been successfully used in the industry as a key replacement for SiO_2 based gate dielectrics in order to continue CMOS device scaling to the 22-nm technology node. Further scaling according to the device roadmap requires the development of oxides with …
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Investigation Of High-k Gate Dielectrics And Metals For Mosfet Devices.
… and deposition techniques have made feasible high- k dielectric materials for MOS transistors. The continued scaling of CMOS devices is pushing the Si-SiO2 to its limit to consider high-k gate dielectrics. The demand for faster, low power, smaller, less expensive devices with good …
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Degradation mechanisms of barium titanate based thick film capacitors
… characteristics, including degradation, of high K (≅ 500) barium titanate based thick film capacitors were studied. It was found that a gold conductor made from Au metallo-organic paste is not compatible with the porous high K dielectric material. The leakage current of a thick film …
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A Study Of Structure-Property Correlation In V2o5 And Tio2 Based Thin Films As Functional Materials
… material for lithium ion battery and TiO2 as a high-K dielectric material. </p> <p>We studied V2O5 thin films prepared by spin coating using three different types of precursors, MOD precursor, sol-gel organic precursor and sol-gel inorganic precursor. On the basis of structural and …
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Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
The need for high speed and density in the modem semiconductor industry requires new channel materials and techniques for improved carrier transport and continuous scaling of the device dimensions. As a material for enhanced hole transport strained-Ge is implemented in this work. High-k dielectric …
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Fabrication and characterization of advanced ALGaN/GaN high-electron-mobility transistors
… of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Chapter 2 reports the development of in situ vacuum anneal and SiH4 or SiH4+NH3 passivation to realize high quality metal gate/high-k dielectric stacks on GaN surface using a multi-chamber …
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Electrical characterization of high-k gate dielectrics for advanced CMOS gate stacks
The oxide/substrate interface quality and the dielectric quality of metal oxide semiconductor (MOS) gate stack structures are critical to future CMOS technology. As SiO_2 was replaced by the high-k dielectric to further equivalent oxide thickness (EOT), high mobility substrates like Ge have …
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High-resolution transmission electron microscopy of III-V FinFETs
… to the sub-10-nm regime. In this work, we use high-resolution transmission electron microscopy (HRTEM) in an effort to understand how interfacial properties between the channel and high-k dielectric affect device performance. At the interface between the channel material, such as InGaSb or …
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Quantum capacitance in scaled down III-V FETs
… In particular, low-effective mass materials with high electron velocities, such as InGaAs and InAs are of great interest. A concern with this approach is the relatively small inversion-layer capacitance that is associated with a low-effective mass channel and the limits that this imposes on the …
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Characteristics of nanocomposites and semiconductor heterostructure wafers using THz spectroscopy
… through the photoexcited layer with an effective dielectric constant described by a Drude + Lorentz model and given by Maxwell-Garnett theory. Comparisons are made with other prevalent theories that describe electronic transport. Similar experiments were repeated for ion-implanted, 3-4nm Si …
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Flexible and solution-processed organic thin film transistors for high voltage applications
… and pentacene high-voltage organic thin film transistors (HVOTFTs) were fabricated on solid and flexible substrates via a low temperature (< 120 °C) solution-processed and vacuum-deposited fabrication methods, achieving breakdown voltages and on/off current …
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Characterization and modeling of low-frequency noise in Hf-based high -kappa dielectrics for future cmos applications
… Roadmap for Semiconductors outlines the need for high-K dielectric based gate-oxide Metal Oxide Semiconductor Field Effect Transistors for sub-45 nm technology nodes. Gate oxides of hafnium seem to be the nearest and best alternative for silicon dioxide, when material, thermal and structural …
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Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications
… integrated circuit (IC). The requirement of high-mobility channel materials allows the industry to harness the potential of III-V semiconductors and germanium. However, the adoption of such high mobility materials as bulk substrates remains cost-prohibitive even today. Hence, another key …
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Growth and Characterisation studies of MgO and Mg silicate dielectric layers on Si and InP surfaces
… oxide (MgO) and magnesium silicate as possible high-k dielectric materials on both silicon and indium phosphide (InP) surfaces. Given that the emphasis of this study was controlling the semiconductor/high-k interface formation, the principle experimental technique used in these studies was x-ray …
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Floating gate engineering for novel nonvolatile flash memories
The increasing demands on higher density, lower cost, higher speed, better endurance and longer retention has push flash memory technology, which is predominant and the driving force of the semiconductor nonvolatile memory market in recent years, to the position facing great challenges. However, …
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InAs Nanowire Devices and Circuits
… a number of key technologies to achieve a higher performance than traditional Si-based transistors. Epitaxially grown nanowires are naturally oriented in the vertical direction, which means that the devices may be fabricated from the bottom and up. This three-dimensional structure allows a …
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Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques
… for multigate transistors, especially for III-V high mobility materials. It is also challenging to increase the fin aspect ratio by dry etching because of the non-ideal anisotropic etching profile. Here, we report a novel method, inverse metal-assisted chemical etching (i-MacEtch), in lieu of …
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