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Showing 1 to 1 of 1 for “"high temperature reliability analysis"”.
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Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors
… device performance investigation, and high-temperature reliability. A comprehensive study of TFETs using mixed As/Sb and Ge/InxGa1-xAs based heterostructures shows superior structural properties and distinguished device performances, both of which indicate the mixed As/Sb and …