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Showing 1 to 5 of 5 for “"high purity GaAs"”.

  1. Low temperature magneto-photoluminescence characterization of high purity gallium arsenide and indium phosphide

    … is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs

    uiuc Repository record for Low temperature magneto-photoluminescence characterization of high purity gallium arsenide and indium phosphide (opens in a new tab)

  2. Low-temperature magnetophotoluminescence characterization of high-purity gallium arsenide and indium phosphide

    … is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs

    uiuc Repository record for Low-temperature magnetophotoluminescence characterization of high-purity gallium arsenide and indium phosphide (opens in a new tab)

  3. Photoluminescence studies of hydrogenation and other defect-related processes in III-V compound semiconductors

    … (PL) studies of defect-related processes in high-purity GaAs and related III-V compounds, are reported. A new effect of light-induced reactivation (LIR) or acceptors in p-type hydrogenated GaAs has been observed. This process is virtually athermal for weakly passivated acceptors such as Mg. …

    uiuc Repository record for Photoluminescence studies of hydrogenation and other defect-related processes in III-V compound semiconductors (opens in a new tab)

  4. Photo-Hall studies of compound semiconductors

    … effect measurements have been made on the high purity compound semiconductors GaAs, InP and a ternary alloy In$\sb{0.53}$Ga$\sb{0.47}$As. The major emphasis of this work involves the phenomenon of persistent photoconductivity. This phenomenon has been used to facilitate the electrical …

    uiuc Repository record for Photo-Hall studies of compound semiconductors (opens in a new tab)

  5. Photo-hall studies of compound semiconductors

    … effect measurements have been made on the high purity compound semiconductors GaAs, InP and a ternary alloy In0 . 53Ga0 . 47As. The major emphasis of this work involves the phenomenon of persistent photoconductivity. This phenomenon has been used to facilitate the electrical …

    uiuc Repository record for Photo-hall studies of compound semiconductors (opens in a new tab)