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Showing 1 to 5 of 5 for “"high purity GaAs"”.
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Low temperature magneto-photoluminescence characterization of high purity gallium arsenide and indium phosphide
… is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs …
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Low-temperature magnetophotoluminescence characterization of high-purity gallium arsenide and indium phosphide
… is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs …
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Photoluminescence studies of hydrogenation and other defect-related processes in III-V compound semiconductors
… (PL) studies of defect-related processes in high-purity GaAs and related III-V compounds, are reported. A new effect of light-induced reactivation (LIR) or acceptors in p-type hydrogenated GaAs has been observed. This process is virtually athermal for weakly passivated acceptors such as Mg. …
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Photo-Hall studies of compound semiconductors
… effect measurements have been made on the high purity compound semiconductors GaAs, InP and a ternary alloy In$\sb{0.53}$Ga$\sb{0.47}$As. The major emphasis of this work involves the phenomenon of persistent photoconductivity. This phenomenon has been used to facilitate the electrical …
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Photo-hall studies of compound semiconductors
… effect measurements have been made on the high purity compound semiconductors GaAs, InP and a ternary alloy In0 . 53Ga0 . 47As. The major emphasis of this work involves the phenomenon of persistent photoconductivity. This phenomenon has been used to facilitate the electrical …