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Showing 1 to 6 of 6 for “"high power diode laser"”.

  1. Thermal Management, Beam Control,and Packaging Designs For High Power

    … for controlling, managing and utilizing high power diode lasers are described. Low pressure water spray cooling for a high heat flux system is developed and proven to be an ideal cooling method for high power diode laser arrays. In order to enable better thermal and optical performance of …

    ucf

  2. Pulsed laser deposition of thick multilayer garnet crystal films for waveguide laser devices

    … this project was to use the technique of pulsed laser deposition (PLD) to fabricate thick multilayered garnet crystal planar waveguides with rare-earth ion doped cores for use as planar waveguide laser devices. Planar waveguides are of interest because of the implications of their structure, …

    soton Repository record for Pulsed laser deposition of thick multilayer garnet crystal films for waveguide laser devices (opens in a new tab)

  3. Diodengepumpte Laserverstärker mit flachen Lasermedien

    Pulsed Laser-Oscillators are limited to a maximum output power depending on their regime of puls duration and repetition rate. The use of amplifiers enable higher power levels. The present theses reports on the development of laser amplifiers with a flat laser media and a special hybrid resonator, …

    aachen Repository record for Diodengepumpte Laserverstärker mit flachen Lasermedien (opens in a new tab)

  4. Thermal and mechanical optimisation of diode laser bar packaging

    Increasing the reliability of high power diode laser bars as a viable photon source in pumping and direct applications is necessary as increased reliability reduces costs and makes diode lasers more attractive for use. High stress levels and high thermal loads are the limiting factors for the …

    aachen Repository record for Thermal and mechanical optimisation of diode laser bar packaging (opens in a new tab)

  5. Infrarot-Diodenlaser auf der Basis der III-V-Antimonide

    Die Arbeit beschäftigt sich mit Halbleiter-Diodenlasern im Wellenlängenbereich zwischen 1.8µm und 2.4µm, die mit Hilfe der Molekularstrahlepitaxie in dem bisher wenig untersuchten (AlGaIn)(AsSb)-Materialsystem realisiert wurden. Durch die Untersuchung der elektrischen, optischen und thermischen …

    freiburg-diss Repository record for Infrarot-Diodenlaser auf der Basis der III-V-Antimonide (opens in a new tab)