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Showing 1 to 20 of 49 for “"high electron mobility transistors (HEMTs)"”.
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Advanced process development for contacts to algan/gan high electron mobility transistors (HEMTS)
High work function metals--Ni, Pt, Ir, and Au--were comparatively studied as Schottky metallizations to GaN and AlGaN/GaN heterostructures. Ni/Au, Ni/Pt/Au, Ir/Au, Ir/Pt/Au and Pt/Au Schottky diodes were fabricated on GaN and AlGaN/GaN substrates. Schottky barrier heights ranging from 0.8 to 0.9 eV …
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Advanced Process Development for Contacts to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors (Hemts)
… used to propose fabrication schemes for novel high speed self-aligned and non-self-aligned AlGaN/GaN high electron mobility trasistors (HEMTs) employing Ir/Pt/Au or Ni/Au gate and non-alloyed ohmic contact metallizations.
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Group III-nitride devices and applications
… in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and demand for more efficient power electronics for telecommunications has driven research into …
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Monolithic Integration of Long Wavelength Photodetectors and High Electron Mobility Transistors on Metamorphic Gallium Arsenide Substrates
… as well as In0.52Al0.48As/In0.53Ga0.47 As high electron mobility transistors (HEMTs) have mainly been fabricated on InP based material systems because these ternary materials are lattice matched to InP substrates. However, the several practical shortcomings of InP substrates such as …
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Investigation of Ohmic Contacts for Gallium Nitride-Based Power Electronic Devices Using Molecular Beam Epitaxy
… of nonalloyed ohmic contacts. Finally, high electron mobility transistors (HEMTs) were demonstrated for a realistic DC-DC (direct current) converter.
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Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications
Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron …
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Thermally Hardened RF GaN HEMTs in Extreme Environments
Traditional, room temperature electronics based on silicon has truly changed the world around us over the past 70+ years. However, many more applications still exist that are limited by the temperature performance of silicon devices (<250◦C). This area of high temperature (HT) electronics is an …
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Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors
… some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for high frequency applications. In spite of their excellent material properties, GaN-based HEMTs are still below the theoretical predictions in their high frequency performance. If the frequency …
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A compact transport and charge model for GaN-based high electron mobility transistors for RF applications
Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future performance projections from device engineering in such a rapidly evolving …
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Near junction thermal management of GaN HEMTs via wafer bonding
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) offer excellent performance in power conversion and high frequency power amplification. However, device self-heating limits reliable output power to 1/8th of reported maximums. Device-level thermal management is therefore …
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Self-aligned AlGaN/GaN transistors for sub-mm wave applications
… done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source and drain access resistance. The eventual fabrication of self-aligned transistors required the …
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Characterization of pGaN-gate power HEMTs
… presents a comprehensive study of p-GaN gate GaN High Electron Mobility Transistors (HEMTs) with a focus on understanding how fabrication process variations and gate structural designs impact key electrical performance metrics. Five industry-fabricated wafers, each processed with distinct etch …
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Foundations of Ohmic Contact Formation on Aluminum Gallium Nitride/gallium Nitride Heterostructures
… gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) have tremendous potential for application in high frequencies, high temperatures and microwave and mm power amplifications. Fabrication of Ohmic contacts for such devices that meet the stringent …
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Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress
Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) are having increased applications in high-power and high-frequency conversion areas due to their superior switching speed, high breakdown voltage, and low conduction losses. Despite their advantages, GaN HEMTs are prone to performance …
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Degradation study of AIGaN/GaN HEMT through electro-thermo-mechanical calculations and thermo-reflectance measurements
During the last few years, AIGaN/GaN high electron mobility transistors (HEMTs) have been intensively studied for high frequency high power applications. In spite of this great interest, device reliability is still an important challenge for the wide deployment of AIGaN/GaN HEMT technology. To …
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Deeply-scaled GaN high electron mobility transistors for RF applications
… of large critical breakdown field and high electron velocity, GaN-based high electron mobility transistors (HEMTs) have great potential for next generation high power RF amplifiers. The performance of GaN devices has increased continuously in the last two decades. However, in spite of …
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Simulation and fabrication of GaN-based vertical and lateral normally-off power transistors
… GaN-based vertical and lateral power transistors and were validated with experimental DC characteristics. The models were used to study the thermal performance of GaN-based vertical metal oxide semiconductor field-effect transistors (MOSFETs) and the lateral high electron mobility …
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Development of high-performance GaN-based power transistors
… study on the development of GaN-based high-power transistors. First, selective area growth by plasma-assisted molecular beam epitaxy, a technology developed by our group for Ohmic contact improvement, is utilized to fabricate large-periphery AlGaN / GaN high electron mobility …
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Processing technology for high quality AlGaN/GaN MOSHEMT interfaces
Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) are very promising for applications requiring high power and high operating frequencies due to its intrinsic material properties like the high electron mobility, large critical electric field and large carrier concentration. For …
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Quantum capacitance in scaled down III-V FETs
… In particular, low-effective mass materials with high electron velocities, such as InGaAs and InAs are of great interest. A concern with this approach is the relatively small inversion-layer capacitance that is associated with a low-effective mass channel and the limits that this imposes on the …
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