Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 50 for “"high electron mobility transistor"”.
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Array-based planar nanowire high electron mobility transistor
III-V semiconductor nanowire (NW) field-effect transistors (FETs) are strong candidates for future low-power digital/RF IC. Bottom-up grown NWs via the vapor-liquid-solid (VLS) mechanism are of particular interest for NW-FET application because the as-grown 3D NW structures require no lithography …
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Two-Dimensional Simulation of the High Electron Mobility Transistor
The High Electron Mobility Transistor (HEMT), a recently developed electronic device which takes advantage of the excellent conduction properties of modulation-doped GaAa/AlGaAs semiconductors, has been shown to perform well for both high-speed digital and analog applications. Switching speeds on …
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Circuit Simulation Models for the High Electron Mobility Transistor
The high electron mobility transistor (HEMT) is one of the fastest switching devices available today. In order to best utilize its capabilities one must be able to simulate its behavior in electronic circuits. This requires an efficient and accurate mathematical model for both dc and ac analysis …
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A two-dimensional numerical model of the high electron mobility transistor
A two-dimensional numerical model of the high electron mobility transistor (HEMT) with consideration of quantization in the channel is presented. In this model, the spatial spread of the electron concentration in the quantum well normal to the heterojunction is taken into consideration by solving …
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Planar nanowire high electron mobility transistor and down-scaling of planar nanowire
Monolithically grown planar nanowire (NW) high electron mobility transistors (NW-HEMTs) have been demonstrated with self-aligned <110> planar GaAs NW channels capped by a thin film AlGaAs barrier. The planar NW-HEMTs exhibit uniform and scalable DC characteristics; and resolve the electrical …
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Physics and Simulation of High-Speed Heterostructure Devices
… devices which have shown promise for both high-speed digital and microwave applications is examined. In particular, the following devices are studied in detail: high electron mobility transistor (HEMT), dual-channel high electron mobility transistor, velocity-modulation transistor, and …
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Development of Gallium Nitride-Based Power Electronic Devices Using Plasma-Assisted Molecular Beam Epitaxy
… study on the development of GaN-based power electronic devices. The hands-on research on GaN compound semiconductors includes thin film growth, material characterization, device fabrication, and device characterization using state-of-the-art semiconductor processing equipment and …
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High Temperature Microwave Frequency Voltage-Controlled Oscillator
As the oil and gas industry continues to explore higher temperature environments, electronics that operate at those temperatures without additional cooling become critical. Additionally, current communications systems cannot support the higher data-rates being offered by advancements in sensor …
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Transport properties along the channel of a Hemt
In the theoretical modeling of a high electron mobility transistor (HEMT), it is inherently assumed that the variation of quantum confinement along the channel from the source to the drain is about the same and therefore, the transport properties are independent of position and only dependent on …
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Gallium Nitride-Based HEMT Devices Modeling and Performance Characterization
The AlGaN/GaN high electron mobility transistor (HEMT) is a promising candidate for microwave applications due to its high power and low noise characteristics at such frequencies. As a result of improved material growth and processing technologies, microwave power densities have been demonstrated …
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High-quality InP on GaAs
… on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, more expensive, and utilize older fabrication equipment than GaAs. High-quality InP on GaAs may also serve as a step towards bringing high-quality …
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Design of a High Temperature GaN-Based Variable Gain Amplifier for Downhole Communications
… temperature often exceeds 210 °C. The need for high temperature operation, combined with the need for real-time data logging has created a growing demand for robust, high temperature RF electronics. This thesis presents the design of an intermediate frequency (IF) variable gain amplifier (VGA) …
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Design-space and scalable technology for GaN based power transistors
… materials to push the performance of electronics forward. Gallium nitride (GaN) has demonstrated very promising performance for advanced electronics, but there is still room for improvement. This thesis discusses several new transistor designs to improve the performance of GaN-based …
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Design and Optimization of Multichip GaN Module Enabling Improved Switching Performance
… have become the ultimate choice for future high-performance power electronics energy conversion. GaN high electron mobility transistor (HEMT) offers very fast switching capability enabling the designer to push switching frequency to the MHz range. Traditional device packaging becomes a …
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Commercialization of group III nitrides-on-silicon technologies
… the blue laser diode, as well as the AIGaN/GaN high electron mobility transistor, each with its own unique requirements for the technology and the implementation. It was recommended that start-up firms interested in commercializing GaN-on- Si technology focus on the growth of GaN on silicon …
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Ultra-low power radio transceiver for wireless sensor networks
… per second and potentially need to operate at high volumetric densities. Since the power constraint is the most challenging requirement, the radio transceiver must consume ultra-low power in order to prolong the limited battery capacity of a node. The radio transceiver must also be compact, …
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Modelling of Multichannel GaN Transistors
The Gallium Nitride High Electron Mobility Transistor (GaN HEMT) is the representative GaN-based wide bandgap semiconductor device. It has been one of the most promising research topics due to its excellent electronic properties in high power, high frequency and high temperature applications. The …
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Characterizing and modeling methods for power converters
… is becoming increasingly important in modern electronic devices, especially in applications with stringent requirements of its form factor. With the evolution of technology, the switching frequency in a power converter is pushed to a higher frequency range, e.g., several MHz or even higher, to …
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Modélisation du comportement non-linéaire de transistors hyperfréquences avec polynômes multivariées optimisés par essaims particulaires
… circuit, incluant les éléments de base tel le transistor. Quoique le transistor représente la base des circuits intégrés, son comportement n’a rien de simple. Dû à la complexité du mouvement des charges à l’intérieur d’un transistor, il existe un grand nombre de différents modèles …
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Development of InAlN HEMTs for space application
This thesis investigates the emerging InAlN high electron mobility transistor (HEMT) technology with respect to its application in the space industry. The manufacturing processes and device performance of InAlN HEMTs were compared to AlGaN HEMTs, also produced as part of this work. RF gain up to 4 …
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