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Showing 1 to 2 of 2 for “"high κ dielectrics"”.

  1. Trapping of hydrogen in Hf-based high κ dielectric thin films for advanced CMOS applications.

    In recent years, advanced high κ gate dielectrics are under serious consideration to replace SiO2 and SiON in semiconductor industry. Hafnium-based dielectrics such as hafnium oxides, oxynitrides and Hf-based silicates/nitrided silicates are emerging as some of the most promising alternatives to …

    unt Repository record for Trapping of hydrogen in Hf-based high κ dielectric thin films for advanced CMOS applications. (opens in a new tab)

  2. Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics

    … aggressive scaling gives rise, among others, to high gate tunnelling currents in contemporary silicon dioxide (SiO2) based Metal-Oxide- Field Effect Transistors (MOSFETs). SiO2 is therefore expected to be replaced in future technologies with alternative dielectrics. Several dielectrics with high

    de-montfort Repository record for Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics (opens in a new tab)