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Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy

Liao, Chi-chihUniversity of Illinois at Urbana-Champaign2011

… compounds and devices, including field effect transistors (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam epitaxy (MBE). The first and second parts of the dissertation detail the growth of InAsSb and InGaSb as the channel materials for n- and …

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